Authors B. J. Cho, J. G. Kim, and C. K. Kim 
Journal/Conference J. Kor. Inst. Telematics. Electron 
Date Sep. 1990. 
volume vol. 27 
Number no. 9 
Page pp. 1409-1418 

B. J. Cho, J. G. Kim, and C. K. Kim, "Characteristics of NMOS transistors with phosphorus source/drain formed by rapid thermal diffusion", J. Kor. Inst. Telematics. Electron., vol. 27, no. 9, pp. 1409-1418, Sep. 1990.