Authors Y. D. He, H. Guan, M. F. Li, B. J. Cho, and Z. Dong 
Journal/Conference Appl. Phys. Lett. 
Date Oct. 1999. 
volume vol. 75 
Number no. 16 
Page pp. 2432-2434 

Y. D. He, H. Guan, M. F. Li, B. J. Cho, and Z. Dong, "Conduction mechanism under quasi-breakdown of ultra-thin gate oxide", Appl. Phys. Lett., vol. 75, no. 16, pp. 2432-2434, Oct. 1999.