Authors H. Guan, M. F. Li, Y. D. He, B. J. Cho, and Z. Dong 
Journal/Conference IEEE Trans. Electron Devices 
Date Aug. 2000. 
volume no. 8 
Number pp. 1608-1616 
Page vol. 47 

H. Guan, M. F. Li, Y. D. He, B. J. Cho, and Z. Dong, "A thorough study of quasi-breakdown phenomenon of thin gate oxide in dual-gate CMOSFET's", IEEE Trans. Electron Devices, vol. 47, no. 8, pp. 1608-1616, Aug. 2000.