Authors Z. Xu, B. J. Cho, and M. F. Li 
Journal/Conference Microelectron. Rel. 
Date Oct. 2000. 
volume vol. 40 
Number no. 8-10 
Page pp. 1341-1346 

Z. Xu, B. J. Cho, and M. F. Li, "Annealing behavior of gate oxide leakage current after quasi-breakdown", Microelectron. Rel., vol. 40, no. 8-10, pp. 1341-1346, Oct. 2000.