Authors H. Guan, B. J. Cho, M. F. Li, Z. Xu, Y. D. He, and Z. Dong 
Journal/Conference IEEE Trans. Electron Devices 
Date May. 2001. 
volume vol. 48 
Number no. 5 
Page pp. 1010-1013 

H. Guan, B. J. Cho, M. F. Li, Z. Xu, Y. D. He, and Z. Dong, "Experimental evidence of interface-controlled mechanism of quasi-breakdown in ultra-thin gate oxide", IEEE Trans. Electron Devices, vol. 48, no. 5, pp. 1010-1013, May. 2001.