Authors W. K. Chim, B. J. Cho, and J. M. P. Yue 
Journal/Conference Jpn. J. Appl. Phys. 
Date Jan. 2002. 
volume vol. 41 
Number no. 1 
Page pp. 47-53 

W. K. Chim, B. J. Cho, and J. M. P. Yue, "Hot-carrier lifetime dependence on channel width and silicon recess depth in n-channel metal-oxide-semiconductor field-effect-transistors with the recessed local oxidation of silicon isolation structure", Jpn. J. Appl. Phys., vol. 41, no. 1, pp. 47-53, Jan. 2002.