Authors C. S. Park, B. J. Cho, and D. L. Kwong 
Journal/Conference IEEE Electron Device Lett. 
Date May. 2003. 
volume vol. 24 
Number no. 5 
Page p. 298 

C. S. Park, B. J. Cho, and D. L. Kwong, "An integratable dual metal gate CMOS process using and ultra-thin aluminum nitride buffer layer," IEEE Electron Device Lett., vol. 24, no. 5, p. 298, May. 2003.