Authors C. S. Park and B. J. Cho 
Journal/Conference IEEE Electron Device Lett. 
Date Nov. 2005. 
volume vol. 26 
Number no. 11 
Page pp. 796-798 

C. S. Park and B. J. Cho, "Dopant-free FUSI PtxSi metal gate for high work function and reduced Fermi-level pinning," IEEE Electron Device Lett., vol. 26, no. 11, pp. 796-798, Nov. 2005.