Authors M. S. Joo, B. J. Cho, N. Balasubramanian, and D. L. Kwong 
Journal/Conference IEEE Electron Device Lett. 
Date Dec. 2005. 
volume vol. 26 
Number no. 12 
Page pp. 882-884 

M. S. Joo, B. J. Cho, N. Balasubramanian, and D. L. Kwong, "Stoichiometry dependence of Fermi-level pinning in fully silicided (FUSI) NiSi gate on high-K dielectric," IEEE Electron Device Lett., vol. 26, no. 12, pp. 882-884, Dec. 2005.