Authors G. Zhang, W. S. Hwang, S. H. Lee, B. J. Cho, and W. J. Yoo 
Journal/Conference IEEE Trans. Electron Devices 
Date Sep. 2008. 
volume vol. 55 
Number no. 9 
Page pp. 2361-2369 

G. Zhang, W. S. Hwang, S. H. Lee, B. J. Cho, and W. J. Yoo, “Endurance Reliability of Multilevel-Cell Flash Memory Using a ZrO2/Si3N4 Dual Charge Storage Layer”, IEEE Trans. Electron Devices, vol. 55, no. 9, pp. 2361-2369, Sep. 2008.