Authors J. Pu, D. S. H. Chan, S. J. Kim, and B. J. Cho 
Journal/Conference IEEE Trans. Electron Devices 
Date Nov. 2009. 
volume vol. 56 
Number no. 11 
Page pp. 2739-2745 

J. Pu, D. S. H. Chan, S. J. Kim, and B. J. Cho,“Aluminum-Doped Gadolinium Oxides as Blocking Layer for Improved Charge Retention in Charge-Trap-Type Nonvolatile Memory Devices”, IEEE Trans. Electron Devices, vol. 56, no. 11, pp. 2739-2745, Nov. 2009.