Authors W. He, J. Pu, D. S. H. Chan, and B. J. Cho 
Journal/Conference IEEE Trans. Electron Devices 
Date Nov. 2009. 
volume vol. 56 
Number no. 11 
Page pp. 2746-2751 

W. He, J. Pu, D. S. H. Chan, and B. J. Cho, “Performance in Charge-Trap Flash Memory Using Lanthanum-Based High-k Blocking Oxide”, IEEE Trans. Electron Devices, vol. 56, no. 11, pp. 2746-2751, Nov. 2009.