NIT :: NanoIC Technology Lab

Conferences

Publication in Conferences

  • 285 Eui Joong Shin, Choong Sun Kim, Su Yeon Park, Jung Woo Choi, and Byung Jin Cho, "Design of a Multiway Thermo-acoustic Loudspeaker with Carbon Nanotubes Sheet", The 4th Korean Graphene Symposium, Buyeo, Korea, April 6-7, 2017
  • 284 Joong Gun Oh, Jae Hoon Bong, Choong Sun Kim, Kwanyong Pak, Wan Sik Hwang, Sung Gap Im, and Byung Jin Cho, "High-Performance Graphene Field-Effect-Transistors with iCVD Gate Dielectrics and Flexible Radio-Frequency Circuit Application", The 4th Korean Graphene Symposium, Buyeo, Korea, April 6-7, 2017
  • 283 Jae Hwan Kim, Seong Jun Yoon, Jae Hoon Bong, Alexander Yoon and Byung Jin Cho, "Graphene based Cu diffusion barrier", 24th Korean Conference on Semiconductors, Kangwondo, Korea, Feb. 13-15, 2017
  • 282 Jae Hoon Bong, Seung-Yoon Kim, Chan Bae Jeong, Ki Soo Chang, Wan-Sik Hwang, and Byung Jin Cho, "Self-heating Effect of Flexible FD-SOI MOSFET on Polymer Substrate", 24th Korean Conference on Semiconductors, Kangwondo, Korea, Feb. 13-15, 2017
  • 281 Jungmin Moon , Hyun Jun Ahn , Il Cheol Rho , Choon Hwan Kim, and Byung Jin Cho, "Work Function Tuning of Titanium Nitride Gate Electrode Employing Atomic Layer Deposition for PMOS Devices" 24th Korean Conference on Semiconductors, Kangwondo, Korea, Feb. 13-15, 2017
  • 280 Seong Jun Yoon, Kwanyong Pak, Taewook Nam, Alexander Yoon, Hyungjun Kim, Sung Gap Im, and Byung Jin Cho, "개시제를 통한 고분자 기상증착기법을 활용한 다공성 초절연물질 (k = 2.0) 표면 실링 방법", 24th Korean Conference on Semiconductors, Kangwondo, Korea, Feb. 13-15, 2017
  • 279 Hyun Jun Ahn, Jungmin Moon, Yongjun Kim, Il Cheol Rho, Choon Hwan Kim and Byung Jun Cho, "Investigation of ALD-Ni as P type Work function Metal Electrode on High-k dielectrics", 24th Korean Conference on Semiconductors, Kangwondo, Korea, Feb. 13-15, 2017
  • 278 Tae In Lee, Yujin Seo, Jungmin Moon, Hyun Jun Ahn, Hyun-Young Yu, Wan Sik Hwang, and Byung Jin Cho, "Metal/Al2O3/GeO2/Ge 구조의 열처리에 따른 유효 일함수에 대한 연구", 24th Korean Conference on Semiconductors, Kangwondo, Korea, Feb. 13-15, 2017
  • 277 Seung-Yoon Kim, Jae Hoon Bong, Cheolgyu Kim, Taek-Soo Kim, Wan Sik Hwang, and Byung Jin Cho, "Ultra-flexible high performance FDSOI transistor for IOT applications", 24th Korean Conference on Semiconductors, Kangwondo, Korea, February. 13-15, 2017
  • 276 Hyeongdo Choi, Sun Jin Kim, Yongjun Kim, Ju Hyung We, Ji Seon Shin, Kevin K. Yi and Byung Jin Cho, "Process Optimization of Screen-printed Thermoelectric Thick-films for Flexible Thermoelectric Devices", The 4th International Conference on Electronic Materials and Nanotechnology for Green Environment 2016, Jeju, Korea, November 6-9, 2016
  • 275 Seung Min Song, Joong Gun Oh, Jae Hoon Bong, Wan Sik Hwang and Byung Jin Cho, "Enhancement of Drain Current Saturation and Voltage Gain in Graphene-on-Silicon Field Effect Transistors", The 8th International Conference on Recent Progress in Graphene Research (RPGR) 2016, Seoul, Korea, September 25-29, 2016
  • 274 Jae Hwan Kim, Seong Jun Yoon, Jae Hoon Bong, Alexander Yoon and Byung Jin Cho, "PVP/GO:Graphene/Polymer composite film as a Cu diffusion barrier", The 8th International Conference on Recent Progress in Graphene Research (RPGR) 2016, Seoul, Korea, September 25-29, 2016.
  • 273 Eui Joong Shin, Choong Sun Kim, Dong Hwan Kim, Jung-Woo Choi and Byung Jin Cho, "Frequency Controlled Thermo-acoustic Resonator Using a Vertically Aligned CNT Sheet", The 8th International Conference on Recent Progress in Graphene Research (RPGR) 2016, Seoul, Korea, September 25-29, 2016.
  • 272

    Seul Ki Hong, Joong Gun Oh, Choong Sun Kim, Wan Sik Hwang and Byung Jin Cho, "Three Dimensional Integration of Graphene and Silicon CMOS Hybrid Circuits", The 8th International Conference on Recent Progress in Graphene Research (RPGR) 2016, Seoul, Korea, September 25-29, 2016.

  • 271

    Choong Sun Kim, Kyung Eun Lee, Sang Ouk Kim, Jung-Woo Choi and Byung Jin Cho, "N-doped Graphene Aerogel Loudspeaker", The 8th International Conference on Recent Progress in Graphene Research (RPGR) 2016, Seoul, Korea, September 25-29, 2016.

  • 270

    Dongil Lee, Byung-Hyun Lee, Jinsu Yoon, Bongsik Choi, Jun-Young Park, Dae-Chul Ahn, Choong-Ki Kim, Byeong-Woon Hwang, Seung-Bae Jeon, Hyun Jun Ahn, Myeong-Lok Seol, Min-Ho Kang, Byung Jin Cho, Sung-Jin Choi and Yang-Kyu Choi, "First Demonstration of a Wrap-Gated CNT-FET with Vertically-Suspended Channels" IEEE International Electron Devices Meeting (IEDM 2016), pp. 5.5.1-5.5.4, San Francisco, USA, December 3-7, 2012.

  • 269 Byung Jin Cho, Sun Jin Kim, Ju Hyung We, Hyeongdo Choi, Yongjun Kim and Ji Sun Shin, “Inorganic-based High-Performance Flexible Thermoelectric Power Generator for Wearable Electronics Application”, The 18th International Symposium on the Physics of Semiconductors and Applications (ISPSA 2016), Jeju, Korea, July 2016 (Invited)
  • 268 Yongjun Kim, Sun Jin Kim, Hyeongdo Choi, Ju Hyung We, Ji Seon Shin, Kevin K. Yi and Byung Jin Cho, "Improvement in Contact Resistance of Screen-printed Bi2Te2.7Se0.3 Thick Films by Annealing in a Reduction Ambient", The 35th International Conference & The 1st Asian Conference on Thermoelectrics, Wuhan, China, May 29 - June 02, 2016.
  • 267 Sun Jin Kim, Yongjun Kim, Hyeongdo Choi, Ju Hyung We, Ji Seon Shin, and Byung Jin Cho, "ZT Enhancement in Screen-Printed Bi2Te2.7Se0.3 Thick Film via Post Annealing Process", The 35th International Conference & The 1st Asian Conference on Thermoelectrics, Wuhan, China, May 29-June 02, 2016.
  • 266 Hyeongdo Choi, Sun Jin Kim, Yongjun Kim, Ju Hyung We, Ji Seon Shin, Kevin K. Yi and Byung Jin Cho, "Investigation on Material Properties of Screen-printed Thermoelectric Thick films", The 35th International Conference & The 1st Asian Conference on Thermoelectrics, Wuhan, China, May 29-June 02, 2016.
  • 265 Eui Joong Shin, Choong Sun Kim, Dong Hwan Kim, Jung Woo Choi, and Byung Jin Cho, "Graphene Thermo-acoustic Resonator for Boosting Sound Pressure Level in Low Frequency Region", The 3rd Korean Graphene Symposium, Buyeo, Korea, April 14-15, 2016.
  • 264 Jae Hwan Kim, Seong Jun Yoon, Jae Hoon Bong, Alexander Yoon, and Byung Jin Cho, "PVP/GO:Graphene/Polymer composite film as a Cu diffusion barrier", The 3rd Korean Graphene Symposium, Buyeo, Korea, April 14-15, 2016.
  • 263 Choong Sun Kim, Kyung Eun Lee, Sang Ouk Kim, Jung-Woo Choi, and Byung Jin Cho, "Thermoacoustic Loudspeaker Using N-doped Reduced Graphene Oxide Aerogel", The 3rd Korean Graphene Symposium, Buyeo, Korea, April 14-15, 2016.
  • 262 Joong Gun Oh, Kwanyong Pak, Choong Sun Kim, Sung Gap Im, and Byung Jin Cho, "High Performance Top-Gated Graphene Field Effect Transistors with Initiated Chemical Vapor Deposition Gate Dielectrics", The 3rd Korean Graphene Symposium, Buyeo, Korea, April 14-15, 2016.
  • 261 김승윤, 최성율, 황완식, 조병진, "고성능 트랜지스터를 위한 실리콘 나노멤브레인의 밸리 엔지니어링", 23rd Korean Conference on Semiconductors, Kangwondo, Korea, Feb. 22-24, 2016.
  • 260 Ju Hyung We, Soo Young Choi, Sun Jin Kim, Jin Baek Kim, and Byung Jin Cho, "Enhanced Thermoelectric Performance of PEDOT:PSS Films by Treatment with Self-assembled Monolayers", The International Conference on Organic and Hybrid Thermoelectrics, Kyoto, Japan, January 18-20, 2016
  • 259 Seong Jun Yoon, Alexander Yoon, Wan Sik Hwang, Sung-Yool Choi, and Byung Jin Cho, "Improved Electromigration-Resistance of Cu Interconnects by Graphene-Based Capping Layer", 2015 Symposium on VLSI Technology, Kyoto, Japan, June 15-19, 2015.
  • 258 Wan Sik Hwang, Byung Jin Cho, Alan Seabaugh, Grace Xing, and Debdeep Jena, "Novel Electronic Devices using Graphene Nanoribbons", The 9th International Conference on Advanced Materials and Devices (ICAMD2015), Jeju, Korea, December 7-9, 2015. 
  • 257 Joong Gun Oh, Hyejeong Seong, Choong Sun Kim, Sung Gap Im, Byung Jin Cho, "Graphene based Resistive Mixer for Flexible RF Applications", 7th International Conference on Recent Progress in Graphene & Two-Dimensional Materials Research, Lorne, Australia, October 25-29, 2015.
  • 256 Byung Jin Cho, Ju Hyung We, and Sun Jin Kim, “Flexible Thermoelectric Energy Harvester using Screen Printing Technique”, The 7th International Workshop on Flexible & Printable Electronics (IWFPE 2015), Jeonju, Korea, November 4-6, 2015. (Invited)
  • 255 Ju Hyung We, Soo Young Choi, Sun Jin Kim, Jin-Baek Kim, and Byung Jin Cho, "Tuning carrier concentration of organic semiconductor using self assembled monolayers for enhanced thermoelectric efficiency", The 34th International Conference on Thermoelectrics & 13th European Converence on Thermoelectrics, Dresden, Germany, June 28th-July 2nd, 2015.
  • 254 Sun Jin Kim , Ju Hyung We, Sung-jae Joo, Ji Hee Son, and Byung Jin Cho, "Optimization of annealing process of screen printed Bi0.5Sb1.5Te3 and Bi0.5Te2.85Se0.15 thick films for thermoelectric power generator" The 34th International Conference on Thermoelectrics & 13th European Converence on Thermoelectrics, Dresden, Germany, June 28th-July 2nd, 2015.
  • 253 Sang-Bum Kang, Sung-Ho Hahm, Chang-Ju Lee, Yi-Sak Koo, Chul-Ho Won, Seul Ki Hong, Byung Jin Cho, and Jung-Hee Lee, “Double-Wavelength Sensitive Algan/Gan MISIM UV Sensor Using Multi-Layer Graphene As Schottky Electrodes”, The 14th International Conference on QiR (Quality in Research) 2015, Lombok, Indonesia, August 10-13, 2015
  • 252 Jae Hoon Bong, Seong Jun Yoon, Alexander Yoon, Wan Sik Hwang and Byung Jin Cho, "Graphene as an Ultrathin Diffusion Barrier for Advanced Cu Metallization", Graphene Week 2015, Manchester, England, June 22-26, 2015.
  • 251 Choong Sun Kim, Seul Ki Hong, Jung-Min Lee, Dong-Soo Kang, Yang-Hann Kim, Jung-Woo Choi and Byung Jin Cho, "Graphene with a Screen Printed Mesh Substrate as a Thermoacoustic Loudspeaker", Graphene Week 2015, Manchester, England, June 22-26, 2015.
  • 250 Byung Jin Cho, "Critical Factors in Graphene FET Design and Other Electronics Applications of Graphene", The 2nd Korean Graphene Symposium, Buyeo, Korea, March 26-27, 2015. (invited)
  • 249

    Jae Hoon Bong, Seong Jun Yoon, Alexander Yoon, Wan Sik Hwang and Byung Jin Cho, "Diffusion Barrier Property of an Ultrathin Graphene Layer for Advanced Cu Interconnect Technology", The 2nd Korean Graphene Symposium, Buyeo, Korea, March 26-27, 2015.

  • 248 Choong Sun Kim, Seul Ki Hong, Jung-Min Lee, Dong-Soo Kang, Yang-Hann Kim, Jung-Woo Choi and Byung Jin Cho, "Graphene Thermoacoustic Loudspeaker with a Screen Printed Polymer Mesh Substrate", The 2nd Korean Graphene Symposium, Buyeo, Korea, March 26-27, 2015.
  • 247 Seul Ki Hong, Jae Hoon Bong, Wan Sik Hwang and Byung Jin Cho, "Vertical Graphene Field-Effect Transistor using Direct Growth Graphene Nanoribbon", The 2nd Korean Graphene Symposium, Buyeo, Korea, March 26-27, 2015.
  • 246 Seong Jun Yoon, Alexander Yoon, Sung-Yool Choi and Byung Jin Cho, "Reduced Interface Diffusion of Cu Interconnects by Graphene-Based Capping Layer", The 2nd Korean Graphene Symposium, Buyeo, Korea, March 26-27, 2015.
  • 245 Joong Gun Oh, Choong Sun Kim and Byung Jin Cho, "Graphene-based Flexible RF Mixer on Arbitrary Substrate", The 2nd Korean Graphene Symposium, Buyeo, Korea, March 26-27, 2015.
  • 244

    Tae Hyung Kim, Byung Jin Cho, Seong Kyun Cheong, "Fatigue life of AL7075-R6 alloy with a circular hole-notch treated by optimum-peening intensity", The Korean Society of Mechanical Engineers, Seoul (Korea, Republic of), 3573 p, 2009.

  • 243
    Yongfeng Lu, Wen D Song, ZhongMin Ren, Chengwu An, DaMing Liu, Sumei Huang, Weijie Wang, Ming Hui Hong, Tow Chong Chong, BJ Cho, JiNan Zeng, CF Tan, "Laser microprocessing in microelectronics, data storage, and photonics", International Symposium on High-Power Laser Ablation 2002, pp211-222, Sep. 2002.
  • 242

    YF Lu, WD Song, ZM Ren, CW An, DM Liu, WJ Wang, BJ Cho, JN Zeng, CF Tan, "Advanced laser applications in microelectronics and data storage devices",  ICALEO 2002 - 21st International Congress on Applications of Laser and Electro-Optics, Congress Proceedings, 2002, (invited)"

  • 241

    Byung-Ho Nam, Dong-Seok Kim, Byung-Jin Cho, Nam-Ki Seok, Jae K Jeong, Sang-Pye Kim, Sang-Woo Kang, Young J Hwang, Young Jin Song, "Comparison Study between Stepper and Scanner for gate CD Control Using Total Process-Proximity-based Correction", Photomask Technology, pp793-800, Jan. 2001.

  • 240

    김승윤, 박종경, 이승준, 이기홍, 피승호, 조병진, "3차원 플래시 메모리를 위한 채널 두께와 고체화 결정법에 의한 결정 크기 효과에 관한 연구", 22nd Korean Conference on Semiconductors, Incheon, Korea, Feb 10-12, 2015.

  • 239

    Byung Jin Cho, Jeong Hun Mun, Seul Ki Hong, Seung Min Song, Oh, Joong Gun, Jae Hoon Bong, and Seong Jun Yoon, “Process Integration for Graphene-Based RF Transistors”, AsiaNano 2014, Jeju, Korea, October 2014 (Invited)

  • 238

    Joong Gun Oh, Seul Ki Hong, Choong-Ki Kim, Jae Hoon Bong, Jongwoo Shin, Sung-Yool Choi, and Byung Jin Cho, "High Performance Graphene Transistors on Aluminum Nitride Substrates with High Surface Phonon Energy", The 6th International Conference on Recent Progress in Graphene Research (RPGR) 2014, Taipei, Taiwan, September 21-25, 2014.

  • 237

    Seul Ki Hong, and Byung Jin Cho, "The Improvement Method for Metal-Graphene Contact Resistance using Direct Growth Graphene", The 6th International Conference on Recent Progress in Graphene Research (RPGR) 2014, Taipei, Taiwan, September 21-25, 2014.

  • 236 Byung Jin Cho, Jeong Hun Mun, Seul Ki Hong, Seung Min Song, Joong Gun Oh, Jae Hoon Bong, and Seong Jun Yoon, "Process Integration for Graphene-based RF FET", The 6th International Conference on Recent Progress in Graphene Research (RPGR) 2014, Taipei, Taiwan, September 21-25, 2014 (Invited).
  • 235 BJ Cho, JH We, and SJ Kim, "FlexibleThermoelectric Device for Wearable Electronics", The 6th International Symposium on Microchemistry and Microsystems, Singapore, July 2014. (Keynote speech).
  • 234 BJ Cho, "Wearable Thermoelectric Power Generator", Wearable Technologies Conference, San Francisco, USA, July 2014. (Invited)
  • 233
    JH Mun, JH Bong, JG Oh, and BJ Cho, “Growth of monolayer graphene with minimized wrinkles using rGO interfacial layer”, Carbon2014, Jeju, Korea, July 2014.
  • 232 BJ Cho, “Application of graphene for analog and digital electronics", KOREA-FRANCE Joint Symposium 2014, Seoul, Korea, June 2014. (Invited)
  • 231

    Seong Jun Yoon, Sung-Yool Choi and Byung Jin Cho, "Effect of Reduced Graphene Oxide Cap Layer on Electromigration Reliability of Cu Interconnect", Graphene 2014, Toulouse, France, May 6-9, 2014.

  • 230

    Seung Min Song, Jae Hoon Bong, and Byung Jin Cho, "Work function shifts of monolayer and few layers of graphene under metal electrodes", Graphene 2014, Toulouse, France, May 6-9, 2014.

  • 229

    문정훈, 봉재훈, 오중건, 조병진, "rGO 삽입 층을 이용한 고품질 그래핀 성장", The 1st Korean Graphene Symposium, Buyeo, Korea, April 3-4, 2014.

  • 228

    Seung Min Song, Jae Hoon Bong, Jong Kyung Park, and Byung Jin Cho, "Work Function Changes of Graphene under Metal", The 1st Korean Graphene Symposium, Buyeo, Korea, April 3-4, 2014.

  • 227

    Seul Ki Hong, Seung Min Song, and Byung jin Cho, "Improvement of metal-graphene contact resistance using direct growth of graphene", The 1st Korean Graphene Symposium, Buyeo, Korea, April 3-4, 2014.

  • 226

    Joong Gun Oh, Seul Ki Hong, Choong-Ki Kim, Jae Hoon Bong, Jongwoo Shin, Sung-Yool Choi and Byung Jin Cho, "Highly Electrical Performance of Graphene Field Effect Transistors by Aluminum Nitride Substrates with High Surface Phonon Energy", The 1st Korean Graphene Symposium, Buyeo, Korea, April 3-4, 2014.

  • 225

    Jae Hoon Bong, One Jae Sul, Alexander Yoon, Sung-Yool Choi and Byung Jin Cho, "Facile Graphene N-doping by Wet Chemical Treatment for Electronic Applications", The 1st Korean Graphene Symposium, Buyeo, Korea, April 3-4, 2014.

  • 224

    Seong Jun Yoon and Byung Jin Cho, "Electromigration-resistance Improvement of Cu Nano-wire by Reduced Graphene Oxide Coating", The 1st Korean Graphene Symposium, Buyeo, Korea, April 3-4, 2014.

  • 223

    Yunsang Shin, Wonil Chung, Yujin Seo, Choong-Ho Lee, Dong Kyun Sohn, and Byung Jin Cho, "Demonstration of Ge pMOSFETs with 6 A EOT using TaN/ZrO2/Zr-cap/n-Ge(100) Gate Stack Fabricated by Novel Vacuum Annealing and in-situ Metal Capping Method", 2014 Symposium on VLSI Technology, Hawaii, USA, June 9-13, 2014.

  • 222

    Jong Kyung Park, Seung-Yoon Kim, Ki-Hong Lee, Seung Ho Pyi, Seok-Hee Lee, and Byung Jin Cho, "Surface-controlled Ultrathin (2 nm) Poly-Si Channel Junctionless FET towards 3D NAND Flash Memory Applications", 2014 Symposium on VLSI Technology, Hawaii, USA, June 9-13, 2014.

  • 221

    정원일, 신윤상, 이충호, 손동균, 조병진, "In-situ Hafnium capping process for 0.6 nm EOT on Ge wafer", 21th Korean Conference on Semiconductors, Seoul, Korea, Feb 24-26, 2014.

  • 220

    박종경, 김승윤, 이기홍, 피승호, 이석희, 조병진, "3차원 플래쉬 메모리를 위한 매우 얇은 다결정 실리콘 채널 층을 갖는 정션리스 플래쉬 메모리의 특성에 관한 연구", 21th Korean Conference on Semiconductors, Seoul, Korea, Feb 24-26, 2014.

  • 219

    B.J. Cho, "Wearble thermoelectric module using screen printing technique", Korean Institute of Metals and Materials (대한금속재료학회) Thermoelectric division special symposium, Changwon, Korea, 06 Feb 2014. (invited)

  • 218

    Byung Jin Cho, Ju Hyung We, and Sun Jin Kim, "LOW-COST THERMOELECTRIC POWER GENERATOR USING SCREEN PRINTING TECHNIQUE", 4th Molecular Materials Meeting (M3), Singapore, 14-16 January 2014. (invited)

  • 217

    Hao Lu, Wan Sik Hwang, Byung Jin Cho, Seul Ki Hong, Alan Seabaugh and Susan Fullerton-Shirey, "Field-Controlled Ion Doping of Graphene", 225th ECS Meeting(Carbon Nanostructures and Devices), Orlando, FL, USA, May 11-16, 2014.

  • 216

    Byung Jin Cho, "Tutorial: Graphene-based electronics for analog and digital applications", The 8th International Conference on Advanced Materials and Devices (ICAMD 2013), Korea, December 11-13, 2013. (invited)

  • 215

    Byung Jin Cho, "High quality graphene synthesis and its application to high performance electronic devices", The 8th International Conference on Advanced Materials and Devices (ICAMD 2013), Korea, December 11-12, 2013. (invited)

  • 214

    Chang Ju Lee, Hyeon Gu Cha, Seul Ki Hong, Seung Hyun Doh, Yi Sak Koo, Byung Jin Cho, and Sung Ho Hahm, "GaN MSM UV Sensor Using Multi-layer Graphene Schottky Electrodes", 2013 2nd International Symposium on Quantum, Nano and Micro Technologies (ISQNM 2013), Singapore, December 1-2, 2013.

  • 213

    Byung Jin Cho, "Graphene for flexible electronics", International Workshop on Flexible & Printable Electronics (IWFPE 2013), Korea, Nov 20-22, 2013. (invited)

  • 212

    조병진, "Synthesis of graphene for electronic device and system applications", 2013 국제 탄소페스티벌, Korea, Nov 18, 2013. (invited)

  • 211

    Byung Jin Cho, Seul Ki Hong, and Seung Min Song, "Graphene for RF and 3D IC Applications", 13th RF Integrated Circuit Technology Workshop, Jeju, Korea, September 26-28, 2013. (invited)

  • 210

    Sung Yool Choi, Jong Woo Shin, Seung Min Song, Ha Min Park, and Byung Jun Cho, "Understanding Contact Resistance of Graphene-Metal Interface for High Performance Graphene Transistor", The 13th International Meeting on Information Display (IMID 2013), Korea, August 26, 2013.

  • 209

    Byung Jin Cho, Seul Ki Hong, Jung Hoon Mun and Woo Cheol Shin "Graphene towards electronic device and systems", Nano Korea 2013, Graphene symposium 2013, Seoul, Korea, July 2013. (Invited).

  • 208

    Ju Hyung We, Sun Jin Kim, Gyung Soo Kim, and Byung Jin Cho, "Flexibility improvement of screen-printed thermoelectric film by conductive polymer treatment" The 32nd International Conference on Thermoelectrics, Kobe, Japan, June 30-July 4, 2013.

  • 207

    Sun Jin Kim, Ju Hyung We, Gyung Soo Kim, and Byung Jin Cho, "Simultaneous measurements of Seebeck coefficient and thermal conductivity across thermoelectric film" The 32nd International Conference on Thermoelectrics, Kobe, Japan, June 30-July 4, 2013.

  • 206

    Jae Hoon Bong, One Jae Sul, Shibu Gangadharan and Byung Jin Cho, "Effects of Hydrogen Plasma Treatment on CVD Graphene", Graphene Week 2013, Chemnitz, Germany, June 2-7, 2013.

  • 205

    Hao Lu, Erich Kinder, Josh Vahala, Wan Sik Hwang, Cheng Gong, Kyeongjae Cho, Seul Ki Hong, Byung Jin Cho, Susan Fullerton-Shirey, and Alan Seabaugh, "Low-Voltage Nonvolatile Graphene Memory Based on Ion Transport", 9th International Nanotechnology Conference on Communication and Cooperation Berlin (INC9), May 14-17, 2013.

  • 204

    BJ Cho, SK Hong, and JH Mun, "Application of graphene toward digital electronic device and system", Graphene 2013, Spain, Bilbao, April 23-26, 2013. (Invited)

  • 203

    Seul Ki Hong, Seung Min Song, Taek yong Kim and Byung Jin Cho, "Reduction of metal-graphene contact resistance by direct growth graphene over metal", Graphene 2013, Spain, Bilbao, April 23-26, 2013.

  • 202

    Kwonjae Yoo, Il-Suk Kang, Yehoon Park, Chi Won Ahn, Jongwoo Shin, Dae Yool Jung, Byung Jin Cho, Sung-Yool Choi and Hongkyw Choi, "Large-area tungsten diselenide atomic layers on an insulator substrate grown by vapor phase chemical deposition", APS March Meeting 2013, Baltimore, Maryland, March 18-22, 2013.

  • 201

    최성율, 정대율, 신종우, 봉재훈, 조병진, "전기화학적 박리법을 이용한 그래핀 전사에서의 도핑농도 변화에 따른 그래핀 특성 분석", 한국진공학회 동계 정기 학술대회, Korea, Feb 18-20, 2013.

  • 200

    박종경, 이석희, 이기홍, 피승호, 조병진, "플래쉬 메모리 소자에서의 초기 VT 불안정 현상 개선에 관한 연구", 20th Korean Conference on Semiconductors, Hoengsung, Korea, Feb 4-6, 2013.

  • 199

    Seul Ki Hong, Ki Yeong Kim, Taek Yong Kim, Joung ho Kim, and Byung Jin Cho, "CVD를 이용한 그래핀의 전자기 차폐효과", 20th Korean Conference on Semiconductors, Hoengsung, Korea, Feb 4-6, 2013.

  • 198

    김선진, 위주형, 김경수, 조병진, "열전박막(후막)의 수직방향 제벡계수와 열전도도 동시 측정방법", 20th Korean Conference on Semiconductors, Hoengsung, Korea, Feb 4-6, 2013.

  • 197

    문정훈, 조병진, " 높은 on/off 전류비를 위한 그래핀 소자 구조", 20th Korean Conference on Semiconductors, Hoengsung, Korea, Feb 4-6, 2013.

  • 196

    신우철, 김택용, 조병진, "Performance and Reliability Enhancement of Graphene Transistors by Utilizing a Multifunctional Inteface Layer", 20th Korean Conference on Semiconductors, Hoengsung, Korea, Feb 4-6, 2013.

  • 195

    위주형, 김선진, 김경수, 조병진, "스크린프린팅 공정기법을 이용한 열전 발전소자의 공정 및 구조 최적화", 20th Korean Conference on Semiconductors, Hoengsung, Korea, Feb 4-6, 2013.

  • 194

    Tae Kyun Kim, Young Gwang Yoon, Jung Min Moon, Dong-Il Moon, Gi Seong Lee, Dong Wook Lee, Dong Eun Yoo, Hae Chul Hwang, Jin Soo Kim, Hyun Mook Jung, Yang-Kyu Choi, Byung Jin Cho, and Seok-Hee Lee, "First Experimental Demonstration of Junctionless SiGe PMOS FinFETs on n-type Bulk-Si", 20th Korean Conference on Semiconductors, Hoengsung, Korea, Feb 4-6, 2013.

  • 193

    송승민, 박종경, 설원제, 조병진, "그래핀의 work-function 변이에 관한 연구", 20th Korean Conference on Semiconductors, Hoengsung, Korea, Feb 4-6, 2013.

  • 192

    BJ Cho, "Recent progress and technical issues of the application of graphene to electronic devices", SEMI Technology Symposium, Seoul, Korea, January, 2013. (invited)

  • 191

    Jong Kyung Park, Dong-Il Moon, Yang-Kyu Choi, Seok-Hee Lee, Ki-Hong Lee, Seung Ho Pyi, and Byung Jin Cho, "Origin of transient Vth shift after erase and its impact on 2D/3D structure charge trap Flash memory cell operations", , International Electron Devices Meeting (IEDM 2012), pp. 2.4.1 - 2.4.4, San Francisco, USA, December 10-13, 2012.

  • 190

    BJ Cho, "Recent progress of graphene based FET device technology", 2012 KSIEC (Korean Society of Industrial and Engineering Chemistry) Fall meeting 한국공업화학회 2012 추계학술대회, November, 2012 (invited).

  • 189

    Ki yeong Kim, Kyoung choul Koo, Seul ki Hong, Jong hoon Kim, Byung jin Cho, and Joung ho Kim, "Graphene-based EMI Shielding for Vertical Noise Coupling Reduction in 3D Mixed-Signal System", IEEE Electrical Performance of Electronic Packaging and Systems (EPEPS 2012), Tempe, Arizona, USA, October 21-24, 2012.

  • 188

    BJ Cho, SM Song, and JK Park, "Issues on Metal Contact and Gate Electrode of Graphene Based FET", The 4th International Conference on Recent Progress in Graphene Research (RPGR) 2012, p. 26, Beijing, China, October 3-6, 2012 (Invited).

  • 187

    Sun Jin Kim, Ju Hyung We, Gyung Soo Kim, and Byung Jin Cho, "Thermoelectric Properties of p-type Sb2Te3 and n-type Bi2Te3 Thick Films Deposited by Screen-Printing Technique", ENGE 2012, Jeju, Korea, Sep 16-19, 2012.

  • 186

    Ju Hyung We, Sun Jin Kim, Gyung Soo Kim, and Byung Jin Cho, "Realization of a Wearable Thermoelectric Power Generator by Screen-Printing Technique for Human Body Applications", ENGE 2012, Jeju, Korea, Sep 16-19, 2012.

  • 185

    BJ Cho, “Recent progress on application of graphene to MOS devices”, Nano Korea 2012, Symposium on Graphene Nanotechnology, Seoul, Korea, August 2012. (Invited).

  • 184

    Ju Hyung We, Sun Jin Kim, Gyung Soo Kim, and Byung Jin Cho, "Process and Structural Optimization of a Planar-Type Thermoelectric Power Generator by Screen-Printing Technique", The 31st International & 10th European Conference on Thermoelectrics, Aalborg, Denmark, July 9-12, 2012.

  • 183

    Sun Jin Kim, Ju Hyung We, Gyung Soo Kim, and Byung Jin Cho, "Optimization of Annealing Process of Screen Printed Sb2Te3 and Bi2Te3 Thick Films for Power Generator", The 31st International & 10th European Conference on Thermoelectrics, Aalborg, Denmark, July 9-12, 2012.

  • 182

    Taesik Yoon, Woo Cheol Shin, Taek Yong Kim, Jeong Hun Mun, Byung Jin Cho, and T. Kim, “Adhesion Energy and Etching-Free Renewable Transfer of Graphene As-Grown on Copper", PRIME 2012, Honolulu, Hawaii, October 7-12, 2012.

  • 181

    Woo Cheol Shin, Byung Jin Cho, “Seeding ALD of high-k gate dielectric in CVD graphene FETs for enhanced device performance and reliability”, Graphene Week 2012, Delft, Netherlands, June 4-8, 2012.

  • 180

    Alexander V. Klekaachev, Inge Asselberghs, Sergey N.Kuznetsov, Micro Cantoro, Jeong Hun Mun, Byung Jin Cho, Johan Hofkens, Marleen H. Veen, Afshin Hadipour, Andre L. Stesmans, Marc M. Heyns, Stefan De Gendt, “Charge transfer phenomena in Graphene Cdse/ZnS quantum dot system and their application”, Graphene Week 2012, Delft, Netherlands, June 4-8, 2012.

  • 179

    BJ Cho, “Graphene for Future Electronic Devices”, The 9th Korea-US NanoForum, Seoul, Korea, June 2012. (Invited)

  • 178

    BJ Cho, “Tehnical Issues and Recent Progress on Graphene-based RF MOSFET”, IEEE Topical Symposium on RF Nanotechnology, Singapore, May 22-24, 2012 (Invited).

  • 177

    BJ Cho, “Graphene for MOS devices”, 2012 한국재료학회 제 22 회 신소재 심포지엄, May 2012 (Invited).

  • 176

    Yu Jin Seo, Joong Gun Oh, Taek Yong Kim, Byung Jin Cho, and Seok Hee Lee "Metal-Germanium contacts with Graphene Interfacial Layer", ENGE 2012, Jeju, Korea, Sep 16-19, 2012.

  • 175

    Seul Ki Hong, and Byung Jin Cho, "Chemical Analysis and Thermal Curing Effects of CVD graphene during transfer process", Graphene 2012, Brussels, Belgium, April 10-13, 2012.

  • 174

    Byung Jin Cho, “Graphene for Electronic Devices”, 2012 Graphene Symposium, pp. 95-126, 한국공업화학회, March, 2012 (Invited).

  • 173

    Jong Kyung Park, Seung Min Song, Jeong Hun Mun, and Byung Jin Cho, "Dramatic Improvement of high-K Gate Dielectric Reliability by Replacing Metal Gate Electrode with Mono-Layer Graphene", 2012 Symposium on VLSI Technology, Hawaii, USA, June 12-15, 2012.

  • 172

    Jong Kyung Park, Seung Min Song, Jeong Hun Mun, and Byung Jin Cho, "Graphene Gate Electrode for Advanced Silicon-Based CMOS Devices", Graphene Week 2012, Delft, Netherlands, June 4-8, 2012.

  • 171

    Jong Kyung Park, Seok-Hee Lee, Ki-Hong Lee, Seung Ho Pyi, and Byung Jin Cho, "Dramatic Increase of Dielectric Constant of Al2O3 by Very Light Doping of La and Thermal Treatment and Its Application to Flash Memory Device", 19th Korean Conference on Semiconductors, Seoul, Korea, Feb. 2012.

  • 170

    Ju Hyung We, Sun Jin Kim, and Byung Jin Cho, "Modeling of Thermal Conductivity Extraction of Thin Film Thermoelectric Materials Using a Screen Printing Technique", 6th Annual Energy Harvesting Workshop, Roanoke, USA, August 7-11, 2011.

  • 169

    Ju Hyung We, Heon Bok Lee, Sun Jin Kim, Kukjoo Kim, Kyung Cheol Choi, and Byung Jin Cho, "Evaluation of Thermal Conductivity of Thin Film Thermoelectric Materials prepared by Screen Printing Technique", 30th International Conference on Thermoelectrics, Traverse City, USA, July 17-21, 2011.

  • 168

    Woo Cheol Shin, Byung Jin Cho, "Graphene Field Effect Transistors with Ultrathin Fluoropolymer/SiO2 Hybrid Gate Dielectric”, The 9th International Nanotech Symposium & Exhibition with NANO KOREA 2011, KINTEX, Ilsan, Korea, August 24-26, 2011.

  • 167

    Seul Ki Hong and Byung Jin Cho, “Non-Volatile Memory Device Using Graphene Oxide”, 2011 IEEE International NanoElectronics Conference, p. 49, Taiwan, June 21-24th, 2011 (Invited).

  • 166

    송승민, 박종경, 조병진, "금속/그래핀/산화막/반도체 구조에서 그래핀이 커패시턴스에 미치는 영향", 2011 Korean Carbon Society Spring Meeting, Seoul, Korea, May 19-20. 2011.

  • 165

    문정훈, 조병진, "높은 on/off 전류비를 갖는 그래핀 전계 효과 소자", 2011 Korean Carbon Society Spring Meeting, Seoul, Korea, May 19-20. 2011.

  • 164

    오중건, 신윤상, 신우철, 조병진,"HfLaO 절연막을 이용한 그래핀 전계효과 트랜지스터의 Dirac 전압 조율", 2011 Korean Carbon Society Spring Meeting, Seoul, Korea, May 19-20. 2011.

  • 163

    홍슬기, 조병진, "그래핀 기반의 유연저항 메모리 소자의 제작과 동작원리에 관한 연구", 2011 Korean Carbon Society Spring Meeting, Seoul, Korea, May 19-20. 2011.

  • 162

    홍슬기, 송승민, 조병진, "기판 전사과정에서의 CVD graphene의 화학적 결합 변화와 mobility 변화에 대한 연구", 2011 Korean Carbon Society Spring Meeting, Seoul, Korea, May 19-20. 2011.

  • 161

    신우철, 김택용, 조병진, "그래핀/게이트 절연막의 계면 제어를 통한 그래핀 전계 효과 트랜지스터의 전기적 성능 및 안정성 향상", 2011 Korean Carbon Society Spring Meeting, Seoul, Korea, May 19-20. 2011.

  • 160

    Woo Cheol Shin, Byung Jin Cho, "Stability Enhancement of Graphene Field Effect Transistors By Employing Ultrathin Amorphous Fluoropolymer Interface Layer", Nature conference - Graphene : The Road to Applications, Boston, USA, May 11-13. 2011.

  • 159

    Joong Gun Oh, Yunsang Shin, Woo Cheol Shin, Byung Jin Cho, "Tunable Dirac Voltage of Graphene Field Effect Transistors With Hafnium Lanthanum Oxide Gate Dielectric", Nature conference - Graphene : The Road to Applications, Boston, USA, May 11-13. 2011.

  • 158

    Jeong Hun Mun, Byung Jin Cho, "Field Effect Transistor With A Physical Gap Graphene Channel For Digital Logic Device With High On/Off Current Ratio", Nature conference - Graphene : The Road to Applications, Boston, USA, May 11-13. 2011.

  • 157

    Seul Ki Hong, Byung Jin Cho, "Low Cost and Flexible Non-Volatile Memory Using Oxidized Graphene and Analysis of Its Switching Mechanism", Nature conference - Graphene : The Road to Applications, Boston, USA, May 11-13. 2011.

  • 156

    Seul Ki Hong, Seung Min song, Byung Jin Cho, "Chemical and Electrical Analysis of CVD Grown Graphene During Layer Transfer Process From Metal to Dielectric Substrate ", Nature conference - Graphene : The Road to Applications, Boston, USA, May 11-13. 2011.

  • 155

    Seul Ki Hong and Byung Jin Cho, "Functionalized graphene oxide for resistive switching memory device", 2011 Materials Research Society (MRS) Spring Meeting, San Francisco, USA, April, 2011 (Invited).

  • 154

    Seul Ki Hong, Byung Jin Cho, "Graphene oxide based flexible ReRAM and its switching mechanism", The Polymer Society of Korea - Society's Spring Meeting, Daejeon, Korea, Apr. 2011 (Invited).

  • 153

    Seul Ki Hong, and Byung Jin Cho, "Flexible RRAM based on Graphene Oxide", 18th Korean Conference on Semiconductors, Jaeju, Korea, Feb. 2011.

  • 152

    Jong Kyung Park, Youngmin Park, Seok-Hee Lee, Sung Kyu Lim, Jae Sub Oh, Moon Sig Joo, Kwon Hong, and Byung Jin Cho, "Enhancement of High temperature Data Retention by La2O3-Doped Nitride for Charge-Trap Type Flash Memory Device", 18th Korean Conference on Semiconductors, Jeju, Korea, Feb. 2011.

  • 151

    Heon Bok Lee, Ju Hyung We, Hyun Jeong Yang, and Byung Jin Cho, "Flexible, Inexpensive, and Environmental-Friendly Thermoelectric Device Module Using a Screen Printing Technique", 1st International Conference on Electronic Materials and Nanotechnology for Green Environment, Jeju, Korea, November 21~24, 2010.

  • 150

    SK Hong, SY Choi, and BJ Cho, “Graphene oxide based flexible ReRAM and its switching mechanism”, Dasan Conference - Graphene Science and Technology, p. 80-81, KOSFT, Jeju, Korea, Nov. 2010 (Invited).

  • 149

    Byung Jin Cho, Jung Hoon Mun, Seung Min Song, Young Dal Noh and Byung Jin Kang, “Synthesis of large-scale graphene layers on metal thin films and application to electronic devices”, International Conference on Electronic Materials 2010, International Union of Materials Research Societies, (IUMRS-ICEM 2010) p. 48, 22nd~27th August 2010, Korea. (Invited).

  • 148

    Jong Kyung Park, Youngmin Park, Sung Kyu Lim, Jae Sub Oh, Moon Sig Joo, Kwon Hong, and Byung Jin Cho, “In-Depth Study on Mechanism of the Performance Improvement by High Temperature Annealing of the Al2O3 in a Charge-Trap Type Flash Memory Device", 2010 International Conference on Solid State Devices and Materials (SSDM 2010), Tokyo, Japan, September 2010.

  • 147

    B. J. Cho, “Properties of graphene on different dielectrics and graphene oxide based flexible resistive memory”, Recent Advances in Graphene and Related Materials 2010, Engineering Conferences International, Aug 2010, Singapore. (Invited).

  • 146

    Seul Ki Hong, Ji Eun Kim, Sang Ouk Kim, and Byung Jin Cho, "Non-Volatile Memory Using Graphene Oxide for Flexible Electronics",10th International Conference on Nanotechnology (IEEE NANO 2010), Seoul, Korea, August 17~20, 2010.

  • 145

    Woo Cheol Shin, Han Ul Moon, Seung Hyup Yoo, and Byung Jin Cho, "Organic/Inorganic Hybrid Gate Dielectric for High-Performance and Low-Power Organic Thin Film Transistors", 10th IEEE International Conference on Nanotechnology (IEEE NANO 2010), Seoul, Korea, August 17-20, 2010.

  • 144

    Seung Min Song and Byung Jin Cho, "Dependence of graphene properties on dielectric under-layers", 30th International Conference on the Physics of Semiconductors , Seoul, Korea, July 25-30, 2010.

  • 143

    B. J. Cho and J. H. Mun, “Synthesis of wafer scale graphene layer for future electronic devices”, 2010 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2010), IEICE Technical Report Vol. 110., No. 109, p. 65 - 67, ISSN 0913-5685, Tokyo, Japan, June 2010 (Invited).

  • 142

    Seul Ki Hong, and Byung Jin Cho, "Non-volatile Flexible ReRAM based on graphene oxide", IEEK Summer Conference 2010, The institute of Electronics Engineers of Korea, Jeju, Korea, June 16~18, 2010.

  • 141

    Hyun-Jeong Yang, Heon-Bok Lee, Ju-Hyung We, KuK-Joo Kim, Kyung-Cheol Choi, Byung-Jin Cho, "Thin Film Thermoelectric Module using Screen Print Method", 29th International Conference on Thermoelectrics, Shanghai, China, May 30 - June 3, 2010.

  • 140

    Jeong Hun Mun, Sung Kyu Lim, Chanyong Hwang and Byung Jin Cho, "Process Control and Uniformity Improvement in Synthesis of Large-scale Graphene Layers on Metal Thin Films.", 2010 Materials Research Society (MRS) Spring Meeting, San Francisco, USA, April, 2010.

  • 139

    Seung Min Song and Byung Jin Cho, "Dependence of Electrical and Mechanical Properties of Graphene on Different Dielectric Substrates", 2010 Materials Research Society (MRS) Spring Meeting, San Francisco, USA, April, 2010.

  • 138

    W. C. Shin, H. U. Moon, S. H. Yoo and B. J. Cho, "Pentacene Thin-Film Transistors with PVP/HfLaO Hybrid Gate Dielectric for Low Voltage Operation", 2010 Materials Research Society (MRS) Spring Meeting, San Francisco, USA, April, 2010.

  • 137

    J.K. Park, Y.M. Park, M.H. Song, S.K. Lim, J.S. Oh, M.S. Joo, K, Hong and B.J. Cho, "Improvement of Data Retention and Erase Speed using Cubic-Structured HfO2 for Charge-trap type flash memory device", 17th Korean Conference on Semiconductors, Daegu, Korea, Feb., 2010.

  • 136

    Jeong Hun Mun, Chanyong Hwang, Sung Kyu Lim, Byung Jin Cho, "Investigation of process dependence of graphene growth on nickel thin film ", 56th AVS symposium,San Jose, California, USA, Nov., 2009.

  • 135

    L. Zhang, W. He, D. Chan, and B. Cho, "Cubic Structured HfLaO Dielectrics for MIM Capacitor for RF IC Applications", 215th ECS Meeting , San Francisco, USA, May., 2009.

  • 134

    B.J.Kang, S.K.Lim, and B.J.Cho, "Surface Passivation Using Silane for Epitaxial Growth of Graphene on SiC substrate", 215th ECS Meeting , San Francisco, USA, May., 2009.

  • 133

    J.H.Seo, B.J.Kang, and B.J.Cho, “Surface Pre-Treatment for Epitaxial Growth of Graphene on SiC Substrate”, 16th Korean Conference on Semiconductors, Daejeon, Korea, Feb., 2009.

  • 132

    Wei He, Daniel S.H. Chan, and B.J.Cho, "Enhancement of Dielectric Constant of HfO2 by Lanthanum Incorporation and Crystallization", 16th Korean Conference on Semiconductors, Daejeon, Korea, Fab., 2009.

  • 131

    Jin-Woo Han, Seong-Wan Ryu, Sungho Kim, Chung-Jin Kim, Jae-Hyuk Ahn, Sung-Jin Choi, Kyu Jin Choi, Byung Jin Cho, Jin Soo Kim, Kwang Hee Kim, Gi Sung Lee, Jae Sub Oh, Myong Ho Song, Yun Chang Park, Jeoung Woo Kim, and Yang-Kyu Choi, "Energy Band Engineered Unified-RAM (URAM) for Multi-Functioning 1T-DRAM and NVM", 54th IEEE International Electron Device Meeting, 6.6 pp.227-230, San Francisco, Dec. 15-17. 2008.

  • 130

    B. J. Cho, W. He, and J. Pu, “High-K Dielectrics for Charge Trap - type Flash Memory Application”, 2008 Asia-Pacific Workshop on Fundamentals and Applications on Advanced Semiconductor Devices, p. 37 - 41, Sapporo, Japan, Jul., 2008. (Invited).

  • 129

    W.-Y.Loh, P.Majhi, S.-H.Lee,J.-W.Oh, B.Sassman, C.Young, G.Bersuker, B.J.Cho, C.-S.Park, C.-Y.Kang, P.Kirsch, B.-H.Lee, H.R.Harris, H.-H.Tseng, R.Jammy, "The effect of Ge composition and Si cap thickness on hot carrier reliability of Si/Si1-xGex/Si p-MOSFETs with high-K/metal gate", 2008 Symposium on VLSI Technology, pp56-57, Honolulu, USA, Jun., 2008.

  • 128

    J.Huang, P.D.Kirsch, J.Oh, S.H.Lee, J.Price, P.Majhi, H.R.Harris, D.C.Gilmer, D.Q.Kelly, P.Sivasubramani, G.Bersuker, D.Heh, C.Young, C.S.Park, Y.N.Tan, N.Goel, C.Park, P.Y.Hung, P.Lysaght, K.J.Choi, B.J.Cho, H.-H.Tseng, B.H.Lee, and R.Jammy, "Mechanisms Limiting EOT Scaling and Gate Leakage Currents of High-k/Metal Gate Stacks Directl on SiGe and a method to Enable sub-1nm EOT", 2008 Symposium on VLSI Technology, pp82-83, Honolulu, USA, Jun., 2008.

  • 127

    J.W.Han, S.W.Ryu, S.H.Kim, C.J.Kim, J.H.Ahn, S.J.Choi, K.J.Choi, B.J.Cho, J.S.Kim, K.H.Kim, G.S.Lee,J.S.Oh, M.H.Song, Y.C.Park, J.W.Kim, and Y.K.Choi, "Band Offeset FinFET-Based URAM (Unified-RAM) Built on SiC for Multi-functioning NVM and Capacitorless 1T-DRAM", 2008 Symposium on VLSI Technology, pp200-201, Honolulu, USA, Jun., 2008.

  • 126

    J.Pu, S.J.Kim, Y.S.Kim, and B.J.Cho, "Gadolinium Oxide(Gd2O3) Blocking Layer for Fast Program and Erase Speed in SONOS-Type Flash Memory Devices", Symposium F- Materials Science and Technology for Nonvolatile Memories, 2008 Material Research Society Spring Meeting, pp. 114, San Francisco, USA, Mar., 2008.

  • 125

    J. Pu, Daniel S. H. Chan, and B. J. Cho, “A Novel Floating Gate Engineering Technique for Improved Data Retention of Flash Memory Devices”. The 9th International Conference on Solid-State and Integrated-Circuit Technology, Beijing, China, Oct., 2008.

  • 124

    W. He, S. -J. Kim, Y. -S. Kim, B. J. Cho, “Electrical and Physical Properties of ALD HfLaO for CMOS Device Application”. Material Research Society 2008 Spring Meeting, Symposium H, pp. 121, San Francisco, USA, Apr., 2008.

  • 123

    W. He, D. S.H. Chan, and B. J. Cho, “SONOS Type Memory Cell with ALD LaAlO Blocking Oxide for High Speed Operation”. The 9th International Conference on Solid-State and Integrated-Circuit Technology, Beijing, China, Oct., 2008.

  • 122

    B. J. Cho and W. He, “ALD of HfLaO and AlLaO for Flash Memory Device Application”, Proceedings on The 4th Korean ALD Workshop, pp. 99 - 115, Seoul, Korea, May., 2008 (Invited).

  • 121

    B. J. Cho and W. S. Hwang, "Feasibility of Metal Carbides for Metal Gate CMOS Devices ", SEMI Technology Symposium 2008, pp. 233 - 238, Seoul, Korea, Jan., 2008. (Invited).

  • 120

    W. S. Hwang, C. Shen, X. P. Wang, D. S. H. Chan, and B. J. Cho, “A novel Hafnium Carbide Metal Gate Electrode for NMOS Device Application”, 2007 Symposium on VLSI Technology, pp. 156-157, Kyoto, Japan, Jun., 2007.

  • 119

    L. Zhang, W. He, D. S. H. Chan, and B. J. Cho,“A systematic study of high-K interpoly dielectric structures for floating gate flash memory devices”, IEEE 2nd International conference on memory technology and design, p. 223-226, Giens, France, May, 2007.

  • 118

    C. Shen, J. Pu, M. F. Li, and B. J. Cho, “Improvement of retention and Vth window in Flash memory device through optimization of floating gate doping”, IEEE 2nd International conference on memory technology and design, p. 99-101, Giens, France, May., 2007.

  • 117

    H. Zang, W. Y. Loh, J. D. Ye, T. H. Loh, G. Q. Lo, and B. J. Cho, “Integration of Dual Channels MOSFET on Defect-Free, Tensile-Strained Germanium on Silicon”, SSDM 2007.

  • 116

    W. F. Yang, S. J. Lee, S. J. Whang, S. Y. Lim, B. J. Cho and D. L. Kwong,“High quality Si1-xGex nanowire and its application to MOSFET integrated with HfO2/TaN/Ta gate stack”, SSDM 2007.

  • 115

    J. Wang, W. Y. Loh, H. Zang, M. B. Yu, K.T. Chua, T. H. Loh, J. D. Ye, R. Yang, X. L. Wang, S. J. Lee, B. J. Cho, G. Q. Lo, and D. L. Kwong, “Integration of Tensile-Strained Ge p-i-n Photodetector on Advanced CMOS Platform”, Group IV Photonics conference.

  • 114

    Byung Jin Cho, Wan Sik Hwang, and Daniel S. H. Chan, “Metal Carbide Electrodes for Gate-First Metal Gate CMOS Process”, IEEE 4th International Symposium on Advanced Gate Stack Technology, Sep., 2007, Dallas, Texas, USA. (Invited).

  • 113

    G. Zhang, W. S. Hwang, S. M. Bobade, S. H. Lee, B. J. Cho, and W. J. Yoo,“Novel ZrO2/Si3N4 Dual Charge Storage Layer to Form Step-Up Potential Wells for Highly Reliable Multi-Level Cell Application”, International Electron Device Meeting (IEDM) 2007, Dec., 2007, San Francisco, USA.

  • 112

    S. Suthram, P. Majhi, G. Sun, P. Kalra, R. Harris, K. J. Choi, D. Heh, J. Oh, D. Kelly, R. Choi, B.J. Cho, M. M. Hussain, C. Smith, S. Banerjee, W. Tsai, S. E. Thompson, H. H. Tseng, R. Jammy, ”Demonstration of High Performance PMOSFETs Using Si/SixGe1-x/Si Quantum Wells with High-k/Metal Gate Stacks and Uniaxial Strain Additivity for 22 nm Technology and Beyond”, International Electron Device Meeting (IEDM) 2007, December 2007, San Francisco, USA.

  • 111

    S. J. Whang, S. J. Lee, W. F. Yang, B. J. Cho, Y. F. Liew, D. L. Kwong, “Synthesis and transistor performances of high quality single crystalline vapor-liquid-solid grown Si1-xGex nanowire”, IEEE-Nanotech 2007.

  • 110

    H.Zang, C. K. Chua, W. Y. Loh, and B.J. Cho, "Dopant Segregated Pt and Ni-Germanide Schottky S/D p-MOSFETs with Strained Si-SiGe channel", 211th Electrochemical Society Meeting, SYMPOSIUM E1 - Advanced Gate Stack, Source/Drain and Channel Engineering for Si-Based CMOS, Chicago, May, 2007.

  • 109

    H. J. Oh, K. J. Choi, W. Y. Loh, T. Htoo, S. J. Chua, and B. J. Cho, "GaAs Heteroepitaxy on SiGe-on-Insulator Using Ge Condensation and Migration Enhanced Epitaxy", 211th Electrochemical Society Meeting, SYMPOSIUM E1 - Advanced Gate Stack, Source/Drain and Channel Engineering for Si-Based CMOS, Chicago, May, 2007.

  • 108

    Y. Tong, G. K. Dalapati, H. J. Oh and B. J. Cho, "The effect of Interfacial Layer of High-K Dielectrics on GaAs Substrate", 211th Electrochemical Society Meeting, SYMPOSIUM E1 - Advanced Gate Stack, Source/Drain and Channel Engineering for Si-Based CMOS, Chicago, May, 2007.

  • 107

    H.Zang, W. Y. Loh, H. J. Oh, K. J. Choi, H. S. Nguyen, G. Q. Lo and B. J. Cho, "Improved current drivability and gate stack integrity using buried SiC layer for strained Si/SiGe channel devices", 211th Electrochemical Society Meeting, SYMPOSIUM E1 - Advanced Gate Stack, Source/Drain and Channel Engineering for Si-Based CMOS, Chicago, May, 2007.

  • 106

    W. F. Yang, S. J. Whang, S. J. Lee*, H. C. Zhu, and B. J. Cho, "Fabrication and characterization of 65nm gate length p-MOSFET integrated with bottom up grown Si nanowire", 211th Electrochemical Society Meeting, SYMPOSIUM E1 - Advanced Gate Stack, Source/Drain and Channel Engineering for Si-Based CMOS, Chicago, May, 2007.

  • 105

    S. J. Whang, S. J. Lee, W. F. Yang, H. C. Zhu, B. J. Cho, and Y, F. Liew, "Substrate dependence of growth of single crystalline Si1-xGex nanowires and performance of MOSFET", 211th Electrochemical Society Meeting, SYMPOSIUM E1 - Advanced Gate Stack, Source/Drain and Channel Engineering for Si-Based CMOS, Chicago, May, 2007.

  • 104

    G. K. Dalapati, Y. Tong, W. Y. Loh, and B. J. Cho, "Impact of interfacial layer control in high-K gate dielectrics on GaAs for advanced CMOS devices", 2007 MRS Spring Meeting, Symposium G: Extending Moore’s Law with Advanced Channel Materials, San Francisco, CA, April 2007.

  • 103

    W. F. Yang, S. J. Whang, S. J. Lee, H.C. Zhu, H.L. Gu, B. J. Cho, "Schottky-Barrier Si nanowire MOSFET: effects of Source/Drain metals and gate dielectrics", 2007 MRS Spring Meeting, Symposium DD: Low-Dimensional Materials--Synthesis, Assembly, Property Scaling, and Modeling, San Francisco, CA, April 2007.

  • 102

    S. J. Whang, S. J. Lee, W. F. Yang, H. C. Zhu, H. L. Gu, B. J. Cho and Y. F. Liew, "Doping of Al-catalyzed Vapor-liquid-solid Grown Si Nnanowires", 2007 MRS Spring Meeting, Symposium EE: Applications of Nanotubes and Nanowires, San Francisco, CA, April 2007.

  • 101

    B. J. Cho, "Integration of high-K gate dielectric into high mobility substrate", 2006 International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ULSI DEVICES SCIENCE AND TECHNOLOGY, Kawasaki, Japan, 2006 (Invited).

  • 100

    B. J. Cho and S. J. Kim, "Application of High-ĸ dielectrics to MIM capacitors for RF/analog CMOS Devices", SEMICON Korea 2006 SEMI Technology Symposium, Seoul, Korea 2006. (Invited).

  • 99

    W. S. Hwang, V. N. Bliznetsov, B. J. Cho, D. S. H. Chan, and W. J. Yoo, "Damage free etching of RuO2 in O2/He plasma", 28th International Symposium on Dry Process, Nagoya, Japan, November 2006.

  • 98

    W. S. Hwang, B. J. Cho, D. S. H. Chan, and W. J. Yoo, "Study on nonvolatile byproducts generated during etching of advanced gate stacks", 28th International Symposium on Dry Process, Nagoya, Japan, November 2006.

  • 97

    W. S. Hwang, W. J. Yoo, B. J. Cho, and D. S. H. Chan, "Effects of Low Energy Nitrogen Plasma on the Removal of HfSiON", AVS 53rd International Symposium, San Francisco, November 2006.

  • 96

    C. S. Park, S. C. Song, G. Bersuker, H. N. Alshareef, B. S. Ju, P. Majhi, B. H. Lee, R. Jammy, H. K. Park, M. S. Joo, J. Pu, and B. J. Cho, "Demonstration of Low Vt NMOSFETs Using Thin HfLaO in ALD TiN/HfSiO Gate Stack", 2006 International Conference on Solid State Devices and Materials (SSDM 2006), Yokohama, Japan, September 2006.

  • 95

    C. C. Yeo, M. H. Lee, C. W. Liu, K. J. Choi, T. W. Lee, and B. J. Cho, "Metal gate/high-K dielectric stack on Si cap/ultra-thin pure Ge epi/Si substrate", Proceedings on 2005 IEEE Conference on Electron Devices and Solid-State Circuits, pp. 107-110, Hong Kong, December 2005.

  • 94

    B. J. Cho, "Metal Electrode (Panel Presentation)", Proceedings on 2nd International Symposium on Advanced Gate Stack Technology, pp. 15 - 19, Austin, Texas, September 2005.

  • 93

    B. J. Cho, "Technical challenges in Front-End Processes for next generation CMOS devices", AMSEA ET (Applied Materials South East Asia Engineering & Technology) Conference 2005, Singapore, August 2005. (Keynote speech)

  • 92

    C. S. Park, B. J. Cho, W. S. Hwang, W. Y. Loh, L. J. Tang, and D. L. Kwong, "Dual Metal Gate Process by Metal Substitution of Dopant-Free Polysilicon on High-K Dielectric", 2005 Symposium on VLSI Technology, pp. 48-49, Kyoto, Japan, June 2005.

  • 91

    S. J. Kim, B. J. Cho, M. B. Yu, M. F. Li, Y. Z. Xiong, C. Zhu, A. Chin, and D. L. Kwong, "High Capacitance Density (>17fF/um2) Nb2O5-based MIM capacitors for Future RF IC Application", 2005 Symposium on VLSI Technology, pp. 56-57, Kyoto, Japan, June 2005.

  • 90

    B. J. Cho, "Integration of Dual Metal Gate/High-K dielectric Stacks for Fermi-Level Pinning Free", The 2nd International Workshop on Nanoscale Semiconductor Devices, p. 253-279, Daegu, Korea, June 2005. (Invited).

  • 89

    Y. N. Tan, B. J. Cho, W. K. Chim, W. K. Choi, M. S. Joo, and T. H. Ng, "Evaluation of SOHOS (polysilicon-oxide-high-K-oxide-silicon) structure for Flash memory device application", 3rd International Conference on Materials for Advanced Technologies, Symposium G: Nanodevices and Nanofabrication, p. 19-20, MRS Singapore, July 2005.

  • 88

    D.Poon, L. S. Tan, B. J. Cho, A. Y. Du, and L. Chan, "Formation of Phosphorus-doped shallow source/drain junctions for Ge MOSFET", 3rd International Conference on Materials for Advanced Technologies, Symposium H: Silicon Microelectronics: Processing to Packaging, p. 5, MRS Singapore, July 2005.

  • 87

    M. S. Joo, B. J. Cho, N. Balasubramanian, and D. L. Kwong, "Role of Si in Fermil-level pinning phenomena in metal/high-K dielectric gate stack", 3rd International Conference on Materials for Advanced Technologies, Symposium H: Silicon Microelectronics: Processing to Packaging, p. 40, MRS Singapore, July 2005.

  • 86

    B. J. Cho, C. S. Park, P. W. Lwin, S. Y. Wong, J. Pu, W. S. Hwang, L. J. Tang, W. Y. Loh, and D. L. Kwong, "Dual metal gate process scheme for wide range work function modulation and reduced Fermi level pinning", 3rd International Conference on Materials for Advanced Technologies, Symposium H: Silicon Microelectronics: Processing to Packaging, p. 41, MRS Singapore, July 2005.

  • 85

    B. J. Cho, S. J. Kim, M. F. Li, C. Zhu, A. Chin, M. B. Yu, Y. Z. Xiong, and D. L. Kwong, "Niobium oxide (Nb2O5) as a high-K dielectric for RF IC application", 3rd International Conference on Materials for Advanced Technologies, Symposium H: Silicon Microelectronics: Processing to Packaging, p. 10, MRS Singapore, July 2005.

  • 84

    C. C. Yeo, B. J. Cho, H. Yeo, F. Gao, S. J. Lee, C. Y. Yu, C. W. Liu, and L. J. Tang, "Study of pure Ge on Si substrate for nMOSFET with HfAlO as gate dielectric and its thermal stability", 3rd International Conference on Materials for Advanced Technologies, Symposium H: Silicon Microelectronics: Processing to Packaging, p. 13, MRS Singapore, July 2005.

  • 83

    C. S. Park, B. J. Cho, L. J. Tang, and D. L. Kwong, "Substituted Aluminum Metal Gate on high-K Dielectric for low work-function and Fermi-Level Pinning Free", International Electron Device Meeting (IEDM), December 2004, San Francisco, USA.

  • 82

    Y. N. Tan, W. K. Chim, W. K. Choi, J. M. Sig, N. T. Hau and B. J. Cho, "High-K HfAlO Charge Trapping Layer in SONOS-type Nonvolatile Memory Device for High Speed Operation", International Electron Device Meeting (IEDM), Dec. 2004, San Francisco, USA.

  • 81

    B. J. Cho, S. J. Kim, M. F. Li, and M. B. Yu, "Hafnium-oxide-based high-K metal-insulator-metal capacitors (MIMCAPs) for RF/analog CMOS technologies", 2004 Asia-Facific Microwave Conference, New Delhi, India, Dec., 2004. (Invited).

  • 80

    A. Chin, C. H. Lai, Z. M. Lai, C. F. Lee, C. Zhu, M. F. Li, B. J. Cho, and D. L.Kwong, "High performance RF MOSFETs and passive devices on Si", 2004 Asia-Facific Microwave Conference, New Delhi, India, Dec., 2004. (Invited).

  • 79

    C. S. Park, B. J. Cho, L. J. Tang, W. Wang, and D. L. Kwong, "Top-Surface Aluminized and Nitrided Hafnium Oxide Using Synthesis of Thin AlN and HfO2 Stacked Layer", International Conf. on Solid State Devices and Materials (SSDM), The Japan Society of Applied Physics, Japan, Sept. 2004.

  • 78

    M. S. Joo, B. J. Cho, D. Z. Chi, N. Balasubramanian, and D. L. Kwong, "Behavior of Effective Work Function in Metal/High-K Gate Stack under High Temperature Process", International Conf. on Solid State Devices and Materials (SSDM), The Japan Society of Applied Physics, Japan, Sept. 2004.

  • 77

    S. J. Ding, H. Hu, C. Zhu, S. J. Kim, M. F. Li, B. J. Cho, A. Chin, and D. L. Kwong, "A comparison study of high-density MIM capacitors with ALD HfO2-Al2O3 laminated, sandwiched and stacked dielectrics", Internaional Conference on Solid State and Integrated Circuit Technology (ICSICT), Beijing, China, 2004.

  • 76

    S. J. Kim, B. J. Cho, M. F. Li, S. J. Ding, M. B. Yu, C. Zhu, A. Chin, and D. L.Kwong, "Engineering of Voltage Nonlinearity in High-K MIM Capacitor for Analog/Mixed-Signal ICs", 2004 Symposium on VLSI Technology, pp. 218-219, Honolulu, USA, June 2004. (BEST STUDENT PAPER AWARD)

  • 75

    B. J. Cho, "Dual metal gate CMOS with tunable work function and high-K gate dielectrics", The 1st International Workshop on Nanoscale Semiconductor Devices, Seoul, Korea, May 2004. (Invited).

  • 74

    B. J. Cho, "Dual Metal and fully silicided metal gate processes with tunable workfunction", International NanoElectronics Materials Conference, Grenoble, France, March 2004. (Invited).

  • 73

    B. J. Cho, D. Poon, L. S. Tan, M. Bhat, A. See, "Multiple-pulse laser annealing of boron-implanted preamorphized silicon and the process optimization", IEEE 4th International Workshop on Junction Technology (IWJT-2004), pp. 22-26, Shanghai, China, March 2004. (Invited).

  • 72

    W. Y. Loh, B. J. Cho, M. S. Joo, M. F. Li, D. S. H. Chan, D. L. Kwong, "Analysis of charge trapping and breakdown mechanism in high-K dielectrics with metal gate electrode using carrier separation," International Electron Device Meeting (IEDM), Dec., 2003, Washington, USA.

  • 71

    H.Hu, S. J. Ding, H. F. Lim, C. Zhu, M. F. Li, S. J. Kim, X. F. Xu, J. H. Chen, Y. F. Yong, B. J. Cho, D. S. H. Chan, S. Rustagi, M. F. Yu, C. H. Tung, A. Y. Du, P. D. Foo, A. Chin, D. L. Kwong, "High-performance ALD HfO2-Al2O3 laminate MIM capacitors for RF and mixed signal IC applications", International Electron Device Meeting (IEDM), Dec. 2003, Washington, USA.

  • 70

    C. Zhu, H. Hu, X. F. Yang, S. J. Kim, A. Chin, M. F. Li, B. J. Cho, D. L. Kwong, "Voltage and temperature dependence of capacitance of high-K hfO2 MIM capacitors: A unified understanding and prediction", International Electron Device Meeting (IEDM), Dec., 2003, Washington, USA.

  • 69

    C. H. Huang, D. S. Yu, A. Chin, W. J. Chen, C. Zhu, M. F. Li, B. J. Cho, D. L.Kwong, "Fully silicided NiSi and germanided NiGe dual gates on Al2O3/GOI MOSFETs." International Electron Device Meeting (IEDM), Dec., 2003, Washington, USA.

  • 68

    H. Hang, S. J. Ding, C. Zhu, S. C. Rustagi, Y. F. Lu, M. F. Li, B. J. Cho, D. S. H. Chan, M. B. Yu, A. Chin, D. L. Kwong, "Investigation of PVD HfO2 MIM capacitors for Si RF and Mixed signal ICs application", International semiconductor device research symposium, washington DC, December, 2003.

  • 67

    A. Chin, P. Mei, C. Zhu, M.-F. Li, S. Lee, W. J. Yoo, B. J. Cho and D. L. Kwong, "New Substrate Platform for Metal-Gate/High-k Gate Dielectric MOSFET Integration and RF Technology up to 100 GHz", Advanced Crystal Growth Conference and 2003 International Symposium on Substrate Engineering / Nano SOI Technology for Advanced Semiconductor Devices, November 2003, Korea. (Invited).

  • 66

    C. C. Yeo, B. J. Cho, M. S. Joo, S. J. Whoang, D. L. Kwong, L. K. Bera, S. Mathew, N. Balasubramanian, "Improving electrical properties of CVD HfO2 by multi-step deposition and annealing in a gate cluster tool", International Conf. on Solid State Devices and Materials (SSDM), The Japan Society of Applied Physics, Japan, Sept. 2003.

  • 65

    M. S. Joo, B. J. Cho, C. C. Yeo, S. J. Whoang, S. Matthew, L. K. Bera, N. Balasubramanian, and D. L. Kwong, "MOCVD HfAlxOy gate dielectrics deposited using single cocktail liquid source", 2003 International Conf. on Solid State Devices and Materials (SSDM), The Japan Society of Applied Physics, Japan, Sept. 2003.

  • 64

    C. S. Park, B. J. Cho, N. Balasubramanian, and D. L. Kwong, "A novel approach for integration of dual metal gate process using ultra thin aluminum nitride buffer layer", 2003 Symposium on VLSI Technology, Digest of Technical Papers, pp. 149, Kyoto, Japan 2003.

  • 63

    S. J. Kim, B. J. Cho, M. F. Li, C. Zhu, A. Chin, and D. L. Kwong, "HfO2 and Lanthanide-doped HfO2 MIM capacitors for RF/Mixed IC applications", 2003 Symposium on VLSI Technology, Digest of Technical Papers, pp. 77, Kyoto, Japan, June 2003.

  • 62

    C. H. Huang, M. Y. Yang, A. Chin, W. J. Chen, C. X. Zhu, B. J. Cho, M. F. Li, and D. L. Kwong, "Very low defects and high performance Ge-On-Insulator p-MOSFETs with Al2O3 gate dielectrics", 2003 Symposium on VLSI Technology, pp. 119, Kyoto, Japan, June 2003.

  • 61

    W. Y. Loh, B. J. Cho, M. F. Li, Daniel S. H. Chan, C. H. Ang, Z. J. Zhen, and D. L. Kwong, "Progressive breakdown statistics in ultra-thin silicon dioxides", Proceedings of 10th International Symp. on the Physical and Failure Analysis of Integrated Circuits (IPFA), pp. 157, Singapore, July 2003.

  • 60

    M. F. Li, B. J. Cho, G. Chen, W. Y. Loh, D. L. Kwong, "New reliability issues of CMOS transistors with 1.3 nm gate oxide", 7th International Symposium on Silicon Nitride and Silicon Dioxide Thin Insulating Films, April 2003, Paris, France. (Invited).

  • 59

    Q. C. Zhang, C. Zu, N. Wu, A. Chin, M. F. Li, B. J. Cho, L. K. Bera, and D. L. Kwong, "Germanium MOS capacitors with ultra thin HfO2 gate dielectric", 2nd International Conference on Materials for Advanced Technologies, p. 513, MRS Singapore, December 2003.

  • 58

    M.Balasubramanian, L. K. Bera, S. Mathew, V. Lim, M. S. Joo, and B. J. Cho, "Wet etching characteristics and surface morphology evaluation of MOCVD grown HfO2 film", 2nd International Conference on Materials for Advanced Technologies, p. 532, MRS Singapore, December 2003.

  • 57

    S. Mathew, L. K. Bera, N. Balasubramanian, M. S. Joo, and B. J. Cho, "Channel mobility behaviour in high-K/metal gate NMOSFETs", 2nd International Conference on Materials for Advanced Technologies, p. 516, MRS Singapore, December 2003.

  • 56

    S. J. Kim, B. J. Cho, H. F. Lim, H. Hu, X. F. Yu, H. Y. Yu, M. F. Li, C. X. Zhu, A. Chin, and D. L. Kwong, "Properties of PVD Hafnium oxide films in metal-insulator-metal structure and the role of HfN barrier at dielectric/metal interface", 2nd International Conference on Materials for Advanced Technologies, p. 513, MRS Singapore, December 2003.

  • 55

    H. Y. Yu, N. Wu, C. Yeo, M. S. Joo, M. F. Li, C. Zhu, B. J. Cho, D. L. Kwong, "ALD (HfO2)x(Al2O3)1-x high-K gate dielectrics for advanced MOS devices application", 2nd International Conference on Materials for Advanced Technologies, p. 562, MRS Singapore, December 2003.

  • 54

    C. S. Park, B. J. Cho, N. Balasubramanian, and D. L. Kwong, "Feasibility study of using thin aluminum nitride film as a buffer layer for dual metal gate process", 2nd International Conference on Materials for Advanced Technologies, p. 519, MRS Singapore, December 2003.

  • 53

    D. C. H. Poon, B. J. Cho, L. S. Tan, M. Bhat, and L. Chan, "Electrical evaluation of laser annealed junctions by Hall measurement", 2nd International Conference on Materials for Advanced Technologies, p. 578, MRS Singapore, December 2003.

  • 52

    C. C. Yeo, B. J. Cho, M. S. Joo, S. J. Whang, D. L. Kwong, L. K. Bera, S. Mathew, N. Balasubramanian, "Effect of annealing on the composition and structure of HfO2 and nitrogen incorporated HfO2", 2nd International Conference on Materials for Advanced Technologies, p. 513, MRS Singapore, December 2003.

  • 51

    M. S. Joo, B. J. Cho, C. C. Yeo, Y. L. Ching, W. Y. Loh, S. J. Whoang, S. Mathew, L. K. Bera, N. Balasubramanian, and D. L. Kwong, "Physical and electrical properties of MOCVD HfAlxOy gate dielectric and their composition ratio dependence", 2nd International Conference on Materials for Advanced Technologies, p. 517, MRS Singapore, December 2003.

  • 50

    H. F. Lim, S. J. Kim, H. Hu, X. F. Yu, H. Y. Yu, M. F. Li, B. J. Cho, C. Zhu, A. Chin, D. L. Kwong, "Study of PVD HfO2 and HfOxNy as dielectrics for MIM capacitor application", 2nd International Conference on Materials for Advanced Technologies, p. 532, MRS Singapore, December 2003.

  • 49

    N. Wu, C. Zhu, N. Balasubramanian, C. C. Yeo, M. S. Joo, H. Y. Yu, Q. C. Zhang, L. K. Bera, B. J. Cho, M. F. Li, S. J. Whoang, "Electrical and physical properties of Si1-xGex/HfO2/Si MOS-capacitors", 2nd International Conference on Materials for Advanced Technologies, p. 535, MRS Singapore, December 2003.

  • 48

    X. Yu, C. Zhu, H. Hu, A. Chin, M. F. Li, B. J. Cho, D. L. Kwong, P. D. Foo, and M. B. Yu, "MIM capacitors with HfO2 and HfAlOx for Si RF and analog applications", MRS Spring meeting, CA, USA, May 2003.

  • 47

    C. S. Fong, V. L. S. Wei, R. G. Krishnam, A. Trigg, L. K. Bera, S. Mathew, N. Balasubramanian, M. S. Joo, C. C. Yeo, and B. J. Cho, "Growth and characterization of hafnium oxide thin films prepared by MOCVD", 2003 International conference on Characterisation and Metrology for ULSI technology, Austin, USA, March 2003, AIP Conference Proceedings No. 683, pp. 176-180, AIP.

  • 46

    H.Hu, C. Zhu, Y. F. Lu, J. N. Zeng, Y. H. Wu, Y. F. Liew, M. F. Li, B. J. Cho, W. K. Choi, "Material and electrical characterization of HfO2 films for MIM capacitors applications", MRS Spring meeting, April 2003, USA.

  • 45

    X. Y. Chen, Y. F. Lu, Y. H. Wu, B. J. Cho, H. Hu, "Silicon nanostructured films formed by pulsed-laser deposition in inert gas and reactive gas", MRS Symposium Proceedings Vol. 762, April 2003, pp. A19.2.1CA, USA.

  • 44

    X. Y. Chen, Y. F. Lu, Y. H. Wu, B. J. Cho, W. D. Song, H. Hu, "Photoluminescene from silicon nanocrystals formed by pulsed laser deposition", MRS Symposium Proceedings Vol. 762, pp. I3.9.1, April 2003, CA, USA.

  • 43

    D.Poon, B. J. Cho, Y. F. Lu, M. Bhat, and A. See, "Process optimization for multiple-pulse laser annealing of boron implanted silicon with germanium pre-amorphization", 2003 MRS Spring Meeting, MRS Symposium D: CMOS Front-End Materials and Process Technology, CA, USA, May 2003.

  • 42

    D.Poon, B. J. Cho, Y. F. Lu, M. Bhat, and A. See, "A comparative study of multiple and single pulse laser annealing for ultrashallow boron junction formation", Ultra-Shallow Junctions-2003 Workshop, April 27 - May 1, 2003, Santa Cruz, California, USA.

  • 41

    H. Y. Yu, M. F. Li, D. L. Kwong, B. J. Cho, J. S. Pan, C. H. Ang, and J. Z. Zheng, "Investigation of (HfO2)x(Al2O3)1-x on (100) Si by XPS - energy gap and band alignment", Extended Abstract of the 2002 International Conf. on Solid State Devices and Materials (SSDM), The Japan Society of Applied Physics, Japan, Aug. 2002 .

  • 40

    C. M. Lek , B. J. Cho, W. Y. Loh, C. H. Ang, W. Lin, Y. L. Tan, J. Z. Zhen, J. Tan, T. P. Chen, "Effects of Post-Decoupled-Plasma-Nitridation Annealing of Ultra-Thin Gate Oxide", Proc. of 9th International Symp. on the Physical and Failure Analysis of Integrated Circuits (IPFA), pp. 232, Singapore, July 2002.

  • 39

    W. Y. Loh, B. J. Cho, M. F. Li, C. M. Lek, Y. F. Yong and M. S. Joo, "Correlation between interface traps and gate laeakage in ultra-thin silicon dioxide (20A)", Proc. of 9th International Symp. on the Physical and Failure Analysis of Integrated Circuits (IPFA), pp. 246, Singapore, July 2002.

  • 38

    S. S. Tan, C. H. Ang, C. M. Lek, T. Chen, B. J. Cho, A. See and L. Chan, "Characterization of Ultrathin Plasma Nitrided Gate Dielectrics in PMOSFET for 0.18μm Technology and Beyond", Proc. of 9th International Symp. on the Physical and Failure Analysis of Integrated Circuits (IPFA), pp. 254, Singapore, July 2002.

  • 37

    H.Xie, W. J. Yoo, C. Zhu, S. Y. Lim, D. Tan, B. J. Cho, and D. Lai, "Electrical Properties of CMOS Devices with Cu Local Interconnects", 8th International Conference on Dielectrics & Conductors for ULSI Multilevel Interconnection (DCMIC), USA, February 2002.

  • 36

    C. Zhu, W. J. Yoo, D. P. P. Tan, S. Y. Lim, and B. J. Cho, "Effects of Cu diffusion on MOSFET electrical properties", 18th InternationalVLSI Multilevel Interconnection Conf. (VMIC), Santa Clara, November 2001.

  • 35

    W. Y. Loh, B. J. Cho, M. F. Li, and Z. Xu, "Bipolar current stressing and electrical recovery of quasi-breakdown in thin gate oxides", Proc. of the 8th International Symp. on the Physical and Failure Analysis of Integrated Circuits (IPFA), p. 59, IEEE, Singapore, July 2001.

  • 34

    P. F. Chong, B. J. Cho, E. F. Chor, and M. S. Joo, "Effect of electron-beam lithography on thin gate oxide reliability", Proc. of the 8th International Symp. on the Physical and Failure Analysis of Integrated Circuits (IPFA), p. 55, IEEE, Singapore, July 2001.

  • 33

    B. J. Cho, S. J. Kim, C. H. Ang, C. H. Ling, M. S. Joo, and I. S. Yeo, "Gate oxide reliability concern associated with X-ray lithography", Extended Abstract of the 200 International Conf. on Solid State Devices and Materials (SSDM), pp. 250, The Japan Society of Applied Physics, Sendai, Japan, Aug. 2000.

  • 32

    C. H. Ang, C. H. Ling, Z. Y. Cheng, and B. J. Cho, "A strong temperature dependent hole direct tunneling current in p+ gate/pMOSFET with ultra-thin gate oxide", Extended Abstract of the 200 International Conf. on Solid State Devices and Materials (SSDM), pp. 254, The Japan Society of Applied Physics, Sendai, Japan, Aug. 2000.

  • 31

    Y. D. He, H. Guan, M. F. Li, B. J. Cho, and Z. Dong, "Investigation of quasi-breakdown mechanism in ultrathin gate oxides", Materials Research Society (MRS) 1999 Fall Meeting Symp. Proc., New Hampshire, USA, Nov. 1999.

  • 30

    M. F. Li, Y. D. He, S. G. Ma, B. J. Cho, K. F. Lo, and M. Z. Xu, "Roles of primary hothole and FN electron fluences in gate oxide breakdown", Materials Research Society (MRS) 1999 Fall Meeting Symp. Proc., New Hampshire, USA, Nov. 1999.

  • 29

    H. Guan, Z. Xu, B. J. Cho, M. F. Li, and Y. D. He, "A study of quasi-breakdown mechanism in ultra thin gate oxide under various types of stress", Materials Research Society (MRS) 1999 Fall Meeting Symp. Proc., New Hampshire, USA, Nov. 1999.

  • 28

    H. Guan, M. F. Li, Y. Zhang, B. J. Cho, B. B. Jie, J. Xie, J. L. F. Wang, A. C. Yen, G. T. T. Sheng, Z. Dong, and W. Li, "Predicting plasma charging damage in ultra thin gate oxide by using nondestructive DCIV technique", 1999 IEEE International Integrated Reliability Workshop (IRW) Final Report, pp. 20, Lake Tahoe, CA, USA, Oct. 1999.

  • 27

    P. F. Chong, B. J. Cho, E. F. Chor, M. S. Joo, and I. S. Yeo, "Integrity of gate oxides irradiated under electron-beam lithography conditions", Extended Abstract of the 1999 International Conf. on Solid State Devices and Materials (SSDM), pp. 182, The Japan Society of Applied Physics, Tokyo, Japan, Sep. 1999.

  • 26

    J. M. P. Yue, W. K. Chim, B. J. Cho, W. H. Qin, D. S. H. Chan, Y. B. Kim, S. A. Jang, and I. S. Yeo, "Channel-width effect on hot-carrier degradation in NMOSFETs with recessed-LOCOS isolation structure", Proc. of the 7th International Symp. on the Physical and Failure Analysis of Integrated Circuits (IPFA), pp. 94, IEEE, Singapore, July 1999.

  • 25

    H. Guan, B. J. Cho, M. F. Li, Y. D. He, Z. Xu, and Z. Dong, "A study of quasi-breakdown mechanism in ultra-thin gate oxide by using DCIV technique", Proc. of the 7th International Symp. on the Physical and Failure Analysis of Integrated Circuits (IPFA), pp. 81, IEEE, Singapore, July 1999.

  • 24

    B. J. Cho, S. J. Kim, C. H. Ling, M. S. Joo, and I. S. Yeo, "Radiation -induced leakage current of ultra-thin gate oxide under X-ray lithography condictions", Proc. of the 7th International Symp. on the Physical and Failure Analysis of Integrated Circuits (IPFA), pp. 30, IEEE, Singapore, July 1999.

  • 23

    J. Y. Luo, Y. C. Liang, and B. J. Cho, "Design of lateral OGBT protection circuit for smart power integration", Proc. of 1999 International Conf. on Power Electronics and Drive System, pp. 253, IEEE, Hong Kong, July 1999.

  • 22

    L. H. Ko, B. J. Cho, Y. A. Nga, and L. H. Chan, "Investigation of the gate oxide integrity of the nitrided gate oxide using nitrogen implantation into polysilicon gate", Abstract Proc. of the Asia-Pacific SIA'98 Conf., pp. Mi-P-18, Singapore, Nov. 1998.

  • 21

    J.Luo, Y. C. Liang, and B. J. Cho, "Design of IGBT gate drive with SOA consideration", Proc. of IEEE Power Electronics Drives and Energy systems for Industrial Growth (PEDES)' 98, pp. 307, Perth, Australia, Nov. 1998.

  • 20

    L. H. Ko, B. J. Cho, Y. A. Nga, and L. H. Chan, "The effect of nitrogen incorporation into the gate oxide by using shallow implantation of nitrogen and drive-in process", Proc. of 1998 IEEE Hong Kong Electron Devices Meeting, pp. 32, IEEE, Hong Kong, Aug. 1998.

  • 19

    K. H. Lee, J. G. Oh, B. J. Cho, and J. C. Kim, "Effect of additional low temperature RTA on ultra-shallow p+-n junction formation", Proc. of the 11th International Conf. on Ion Implantation Technology, pp. 634, IEEE, Austin, USA, May 1997. (Best paper award)

  • 18

    N. H. Cho, T. H. Huh, Y. T. Jang, J. S. Ro, K. H. Lee, B. J. Cho, and J. C. Kim, "Annealing behavior of a double MeV implanted silicon", Proc. of the 11th International Conf. on Ion Implantation Technology, pp. 661, IEEE, Austin, USA, May 1997.

  • 17

    S. H. Yoon, J. H. Lee, T. Y. Won, B. J. Cho, J. C. Kim, and D. H. Lee, "3-D adaptive simulation of thermal oxidation process", Proc. of the 26th European Solid State Device Research Conf. (ESSDERC), pp. 351, Bologna, Italy, Sep. 1996.

  • 16

    B. J. Cho, S. A. Jang, T. S. Song, S. H. Pyi, and J. C. Kim, "Double spacer LOCOS process with shallow recess of silicon for 0.20 um isolation", Extended Abstract of the 1996 International Conf. on Solid State Devices and Materials (SSDM), pp. 40, The Japan Society of Applied Physics, Yokohama, Japan, Aug. 1996.

  • 15

    B. H. Park, S. H. Yu, B. J. Cho, and J. C. Kim, "Effect of Ti deposition temperature on TiSi2 orientation and its thermal instability in heavility doped Si", Proc. of 1996 Spring Meeting of Materials Research Society of Korea, pp. 61, MRS of Korea, Taegu, Korea, May 1996.

  • 14

    K. H. Lee, Y. S. Sohn, J. G. Oh, B. J. Cho, and J. C. Kim, "Formation of ultra-shallow junction by point defect engineering", Ion Implantation Conf., Scottsdale, USA, April 1996. (Invited).

  • 13

    Y. B. Kim, S. A. Jang, B. J. Cho, and J. C. Kim, "Sidewall-sealed double LOCOS isolation structure with defect-free isolation recess", Extended Abstract of the 43rd Spring Meeting of the Japan Society of Applied Physics and Related Societies, pp. 730, Tokyo, Japan, March 1996.

  • 12

    M. S. Joo, S. H. Lee, S. K. Lee, B. J. Cho, J. C. KIm, and S. H. Choi, "Novel oxynitridation technology for highly reliable thin dielectrics", 1995 Symposium on VLSI Technology Digest of Technical Papers, pp. 107, IEEE, Kyoto, Japan, May 1995.

  • 11

    S. H. Lee, B. J. Cho, J. C. Kim, and S. H. Choi, "Quasi-breakdown of ultra thin gate oxide under high field stress", IEEE International Electron Devices Meeting (IEDM) Technical Digest, pp. 605, IEEE, San Francisco, USA, , Dec. 1994.

  • 10

    M. S. Joo, S. H. Lee, B. J. Cho, J. C. Kim, and S. H. Choi, "Very light nitridation of thin gate oxide in low pressure N2O", Proc. of the 3rd Symp. on Silicon Nitride and Silicon Dioxide Thin Insulation Films, pp. 458, The Electrochemical Society Proceedings. Vol. 94-61, Pennington, USA, May 1994.

  • 9

    J. U. Lim, B. J. Cho, Y. J. Park, J. C. Kim, and S. H. Choi, "Effect of in-situ P doped polysilicon on gate oxide (I) - yield degradation", Extended Abstract of the 41st Spring Meeting of the Japan Society of Applied Physics and Related Societies, pp. 664, Kawasaki, Japan, March 1994.

  • 8

    J. U. Lim, B. J. Cho, Y. J. Park, J. C. Kim, and S. H. Choi, "Effect of in-situ P doped polysilicon on gate oxide (II) - Process condition dependence", Extended Abstract of the 41st Spring Meeting of the Japan Society of Applied Physics and Related Societies, pp. 664, Kawasaki, Japan, March 1994.

  • 7

    S. H. Lee, M. S. Joo, B. J. Cho, Y. J. Park, and J. C. Kim, "New breakdown mechanism of ultra thin gate oxides under ballistic transport", Proc. of the 1st Korean Semiconductor Tech. Symp., pp. 179, KITE & KIEE, Kyungju, Korea, Feb. 1994.

  • 6

    B. J. Cho, P. Vandenabeele, and K. Maex, "Evaluation of a vertical tube concept for RTP", Materials Research Society (MRS) Symp. Proc.,Vol. 303, pp. 165, San Francisco, MRS, April 1993.

  • 5

    B. J. Cho, P. Vandenabeele, and K. Maex, "Evaluation of a vertical tube concept for RTP", Materials Research Society (MRS) Symp. Proc.,Vol. 303, pp. 165, San Francisco, MRS, April 1993.

  • 4

    B. J. Cho and C. K. Kim, "Anomalous diffusion phenomena in two-step rapid thermal diffusion of phosphorus", Rapid Thermal and Related Processing Techniques, pp. 180, SPIE, Vol. 1393, Santa Clara, USA, Oct. 1990.

  • 3

    B. J. Cho, K. T. Kim, and C. K. Kim, "Wafer temperature simulation and control algorithm in RTA system", Conf. on CAD, Semiconductor Material and Components, pp. 73, KITE, Soeul, Korea, May 1987.

  • 2

    K. T. Kim, B. J. Cho, and C. K. Kim, "p+ n shallow junction formation from BN source using RTP", Conf. on CAD, Semiconductor Material and Components, pp. 77, KITE, Soeul, Korea, May 1987. 

  • 1

    B. J. Cho, K. T. Kim, and C. K. Kim, "Experimental results of a prototype rapid thermal annealing system", Conf. on CAD, Semiconductor Material and Components, pp. 71, KITE, Suwon, Korea, May 1986.