NIT :: NanoIC Technology Lab
2-D Material Device
1. Silicon Nano-membrane Transistor
- A silicon wafer is, of course, opaque and rigid. However, when silicon is thinned down to few nanometer thickness, it becomes transparent and mechanically flexible. It is known that transistor fabricated on thin body SOI wafer might be the key to overcome issues such as short channel effects. With transfer technique, silicon nano-membrane devices with thickness of silicon below 3nm can be transferred on to flexible substrate. Electrical devices made of silicon nano-membrane have both high performance and flexibility. Therefore it will open new era of flexible electronics.
2. Graphene Based Soft Electronics
- The core technology for the novel soft devices is being developed by establishing the optimal device fabrication and structures. Especially, the research goal is to develop the core device technology for the next-generation high performance soft devices based on novel soft materials including the 2 dimensional graphene.
3. Graphene Sound Sticker (3D Sound System)
- We may imagine an ideal 3D sound system that can render a sound from everywhere in space, such as a whispering sound near one’s ear or singing directly in front of the listener. Recent advances in related technologies have revealed that it is possible to produce a “virtual sound ball” at an arbitrary position in space. If one devices an ultra-lightweight thin transducer that can be installed at any desired position, virtual sound balls can be easily synthesized at arbitrary positions without any restriction. This project will investigate novel acoustic arrays that can be fabricated in the shape of a membrane or thin film using a newly discovered nano-material, graphene. This may be the most revolutionary advance in 3D sound technology, because the atomically thin film-type array can be seamlessly integrated into flat panel TVs, PC monitors, walls, and even mobile devices with a negligible increase in the size or weight of the target product. The loudspeaker array can then be built as a form of sticker, and such a device, which can be attached any place, will realize an ideal 3D audio system.
4. Ultra-Low-k/Cu interconnects
- As the feature size of Cu interconnects in modern ULSI system is continuously scaled down, many chip fabrication companies have adopted the Cu/low-k interconnect scheme to reduce RC delay, which is a main huddle to enhance the chip performance. Unfortunately, the low-k material (k~2.4) itself is not enough nowadays, thus needs for ultra-low-k (k~2.0 or even under 2.0) with Cu interconnects have arisen. The ultra-low-k materials contain many pores inside of the films, which makes it possible to reduce permittivity of the films. However, the porosity aggravates many other film characteristics to be successfully integrated to the modern BEOL process, such as weak mechanical & chemical strength, severe plasma-induced damage, and precursors penetration during metal deposition process. Therefore, it is urgent to find a solution to adopt the ultra-low-k materials to modern ULSI system and extensive studies to this research area have been started.