Silicon Nano-Membrane Device
With the rise of wearable technologies along with the dawn of the internet of things (IoT) era, flexible electronics have drawn attention because they can be applied to arbitrarily shaped surfaces. Various flexible devices, including sensors and transistors, have been developed in a wide variety of fields. Many recent flexible devices have adopted two-dimensional (2D) materials such as transition dichalcogenides (TMDs) and organic material as active channel materials due to their inherent flexibility. However, 2D material and organic-based transistors suffer from inferior electrical performance compared to conventional Si-based transistors, especially when used as a switching device for digital circuits. As an alternative, Si-based flexible devices have been studied because they offer better compatibility and scalability with current complementary metal-oxide-semiconductor (CMOS) process integration. Electrical devices made of silicon nano-membrane have both high performance and flexibility. Therefore it will open new era of flexible electronics
Ferroelectric Device and Applications
Ferroelectric materials can have spontaneous electric polarization that can be reversed by applied external electric field. Unlike conventional perovskite structure materials, HfO2 can show ferroelectric properties with extremely thin thickness and with relatively large bandgap. Also it is highly compatible with CMOS technology. Due to its properties, HfO2 is a promising material that can be used for memory devices such as Ferroelectric Field-Effect-Transistor(FeFET). This single transistor non-volatile memory device can realize the future electronic device such as biological synapse of the brain inspired hardware.
Flexible Inorganic/Organic Hybrid Film
Recently, many researches attempt to develop high performance flexible dielectric with reducing thickness and increasing dielectric constant for minimizing equivalent oxide thickness (EOT) of gate dielectric. To satisfy this requirement, we suggest a new, one-step synthesis method to form high-k, ultrathin and homogeneous organic-inorganic dielectric films with homogeneous mixing of the monomer and precursor in the vapor phase. Therefore, inorganic-oxygen bonding component can be homogeneously incorporated and dispersed into polymer matrix, leading to high-k and ultrathin organic-inorganic. The suggested method can be employed widely to enhance gate dielectric properties which is highly desirable for high performance flexible electronics.